View APTGF50A120T1G_4709464.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGF50A120T1G
Phase leg NPT IGBT Power Module
5 Q1 7 8 Q2 CR2 9 10 1 2 12 3 4 NTC 6 11
VCES = 1200V IC = 50A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
CR1
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 1200 75 50 150 20 312 100A @ 1200V Unit V
August, 2007 1-6 APTGF50A120T1G - Rev 0
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGF50A120T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 3.7 6.5 100 Unit A V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A RG = 5 VGE = 15V Tj = 125C VBus = 600V IC = 50A Tj = 125C RG = 5 Min Typ 3450 330 220 330 35 200 35 65 320 30 35 65 360 40 6.9 mJ 3.05 Max Unit pF
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 60A IF = 120A IF = 60A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1200
Typ
Max 150 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
60 2.6 3.2 1.8 300 380 720 3400 3.1
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
nC
www.microsemi.com
2-6
APTGF50A120T1G - Rev 0
IF = 60A VR = 800V di/dt =400A/s
ns
August, 2007
V
APTGF50A120T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.4 0.65 150 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTGF50A120T1G - Rev 0
August, 2007
APTGF50A120T1G
Typical Performance Curve
160 Ic, Collector Current (A) Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle
40
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
120
TJ=25C TJ=125C
30
80
20
TJ=125C
40
10
0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 8
0 0 1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge 18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) On state Voltage vs Junction Temperature
Ic=100A Ic=50A VCE=960V IC = 50A TJ = 25C VCE=240V VCE=600V
4
250
Ic, Collector Current (A)
200 150 100 50 0 0
250s Pulse Test < 0.5% Duty cycle
TJ=25C
TJ=125C TJ=25C
4 8 12 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
16
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
6 5 4 3 2 1 0
Ic=100A
Ic=50A
Ic=25A 250s Pulse Test < 0.5% Duty cycle VGE = 15V
Ic=25A
10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp.
16
25
50 75 100 TJ, Junction Temperature (C)
125
Collector to Emitter Breakdown Voltage (Normalized)
1.20 Ic, DC Collector Current (A) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 25 50 75 100 125 TJ, Junction Temperature (C)
70 60 50 40 30 20 10 0
DC Collector Current vs Case Temperature
25
50 75 100 125 TC, Case Temperature (C)
150
www.microsemi.com
4-6
APTGF50A120T1G - Rev 0
August, 2007
APTGF50A120T1G
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 5 VGE = 15V
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
45
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, TJ=25C VCE = 600V RG = 5
30
250
25 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 180
VCE = 600V RG = 5
200 0 25 50 75 100 125
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50
tr, Rise Time (ns)
tf, Fall Time (ns)
140
40
TJ = 125C
100
VGE=15V
30
TJ = 25C VCE = 600V, VGE = 15V, RG = 5
60
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
Eon, Turn-On Energy Loss (mJ)
24 20 16 12 8 4 0 0
VCE = 600V RG = 5
TJ=125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
28
Turn-On Energy Loss vs Collector Current 8
Turn-Off Energy Loss vs Collector Current
VCE = 600V VGE = 15V RG = 5 TJ = 125C
6
4
TJ = 25C
TJ=25C, VGE=15V
2
0 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 18 Switching Energy Losses (mJ) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 Gate Resistance (Ohms) 50
Eoff, 25A Eon, 25A Eon, 50A Eoff, 50A VCE = 600V VGE = 15V TJ= 125C
8
Switching Energy Losses vs Junction Temp.
VCE = 600V VGE = 15V RG = 5 Eon, 50A
6
4
Eoff, 50A
2
Eon, 25A Eoff, 25A
0 25 50 75 100 TJ, Junction Temperature (C) 125
www.microsemi.com
5-6
APTGF50A120T1G - Rev 0
August, 2007
APTGF50A120T1G
Capacitance vs Collector to Emitter Voltage 10000
Cies
Reverse Bias Safe Operating Area 120 IC, Collector Current (A) 100 80 60 40 20 0 0 400 800 1200 VCE, Collector to Emitter Voltage (V)
C, Capacitance (pF)
1000
Coes
100 0
Cres
10 20 30 40 VCE, Collector to Emitter Voltage (V)
50
0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.7 0.5 0.9
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 80 60 40 20 0 10 20 30 40 50 IC, Collector Current (A) 60
Hard switching ZCS ZVS VCE = 600V D = 50% RG = 5 TJ = 125C TC= 75C
Fmax, Operating Frequency (kHz)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6-6
APTGF50A120T1G - Rev 0
August, 2007

▲Up To Search▲

Price & Availability of APTGF50A120T1G

	To Download APTGF50A120T1G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .