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| JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6486 2N6487 2N6488 Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2N6486 VCBO Collector-base voltage 2N6487 2N6488 2N6486 VCEO Collector-emitter voltage 2N6487 2N6488 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base Open emitter CONDITIONS VALUE 50 70 90 40 60 80 5 15 5 75 150 -65~150 ae ae V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ae /W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6486 VCEO(SUS) Collector-emitter sustaining voltage 2N6487 2N6488 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N6486 ICEX Collector cut-off current VBE=-1.5V 2N6487 2N6488 2N6486 ICEO Collector cut-off current 2N6487 2N6488 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=5A;IB=0.5A IC=15A;IB=5A IC=5A ; VCE=4V IC=15A ; VCE=4V VCE=45V; VCE=40V;TC=150ae VCE=65V; VCE=60V;TC=150ae VCE=85V; VCE=80V;TC=150ae VCE=20V;IB=0 VCE=30V;IB=0 VCE=40V;IB=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=15A ; VCE=4V IC=0.2A ;IB=0 2N6486 2N6487 2N6488 SYMBOL CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 1.3 3.5 1.3 3.5 0.5 5.0 0.5 5.0 0.5 5.0 V V V V mA 1.0 mA 1.0 20 5 150 mA 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6486 2N6487 2N6488 Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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