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| P Channel Enhancement Mode MOSFET ST2301M -3.0A DESCRIPTION The ST2301M is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE -20V/-2.8A, RDS(ON) = 130m-ohm (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 220m-ohm @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3.Drain 3 D G 1 1.Gate 2.Source S 2 PART MARKING SOT-23 3 S01YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST2301MSRG Package SOT-23 Part Marking S01YA Process Code : A ~ Z ; a ~ z ST2301MSRG S : SOT-23 ; R : Tape Reel ; G : Pb - Free 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 P Channel Enhancement Mode MOSFET ST2301M -3.0A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical -20 12 -2.5 -1.5 -10 -1.6 1.25 0.8 150 -55/150 120 Unit V V A A A W /W 2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 P Channel Enhancement Mode MOSFET ST2301M -3.0A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS VGS=0V,ID=-250uA VDS=VGS,ID=-250uA VDS=0V,VGS=12V VDS=-20V,VGS=0V VDS=-20V,VGS=0V TJ=55 VDS-5V,VGS=-4.5V VDS-5V,VGS=-2.5V VGS=-4.5V,ID=-2.8A VGS=-2.5V,ID=-2.0A VDS=-5V,ID=-2.8V IS=-1.6A,VGS=0V -20 -0.48 V -1.5 100 -1 -10 uA A 0.135 0.220 V nA ID(on) RDS(on) gfs VSD -6 -3 S -1.2 V 6.5 -0.8 Qg Qgs Qgd Ciss Coss Crss td(on) tr VDS=-6V VGS=-4.5V ID-2.8A VDS=-6V VGS=0V F=1MHz VDD=-6V RL=6 ID=-1A VGEN=-4.5V RG=6 4.8 0.75 1.4 35 150 60 10 32 38 30 8 nC pF 20 45 55 50 nS td(off) tf 3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 P Channel Enhancement Mode MOSFET ST2301M -3.0A TYPICAL CHARACTERICTICS (25 Unless noted) 4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 P Channel Enhancement Mode MOSFET ST2301M -3.0A TYPICAL CHARACTERICTICS (25 Unless noted) 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 P Channel Enhancement Mode MOSFET ST2301M -3.0A TYPICAL CHARACTERICTICS (25 Unless noted) 6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 P Channel Enhancement Mode MOSFET ST2301M -3.0A SOT-23 PACKAGE OUTLINE 7 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 |
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