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APT50N60JCCU2
ISOTOP(R) Boost chopper
Super Junction MOSFET Power Module
K
VDSS = 600V RDSon = 45m max @ Tj = 25C ID = 50A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features
D
G
* * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
S
S D
K
* * *
SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Max ratings 600 50 38 130 20 45 290 15 3 1900 Unit V A V m W A mJ
May, 2008 1-3 APT50N60JCCU2 - Rev 2
Tc = 25C Tc = 80C
Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT50N60JCCU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 22.5A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V
40 3
Max 250 500 45 3.9 100
Unit A m V nA
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff VSD trr Qrr Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 44A Tj=25C VGS = 10V VBus = 400V ID = 44A RG = 3.3 Tj=25C VGS = 10V ; VBus = 400V ID = 44A ; RG = 3.3 Tj=125C VGS = 10V ; VBus = 400V ID = 44A ; RG = 3.3 VGS = 0V, IS = - 44A IS = - 44A Tj = 25C VR = 400V Tj = 25C diS/dt = 100A/s Min Typ 6.8 0.32 150 34 51 30 20 100 20 405 520 660 635 0.9 600 17 1.2 J V ns C J ns nC Max Unit nF
SiC chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(AV) VF QC Q Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C Min 600 Typ 100 200 20 1.6 2 28 130 100 Max 400 2000 1.8 2.4 Unit V A A V nC pF
May, 2008 2-3 APT50N60JCCU2 - Rev 2
VR=600V
50% duty cycle
IF = 20A
IF = 20A, VR = 300V di/dt =800A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
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APT50N60JCCU2
Thermal and package characteristics
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min CoolMos SiC Diode 2500 -40
Typ
Max 0.43 1.4 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
Gate
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". May, 2008 3-3 APT50N60JCCU2 - Rev 2
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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