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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3371 DESCRIPTION *Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A *High Speed Switching * APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i VALUE 800 V 500 V 7 V 15 A 30 A 5 A UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC 200 W Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3371 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.0 V VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V Collector Cutoff Current VCB= 800V; IE= 0 VEB= 5V; IC= 0 0.1 mA Emitter Cutoff Current 0.1 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain Switching Times; Resistive Load ton ts tf Turn-on Time Storage Time Fall Time w w scs .i w IC= 8A; VCE= 5V .cn mi e 15 10 1.0 s s s IC= 8A; IB1= -IB2= 1.6A; VCC= 200V 3.0 1.0 isc Websitewww.iscsemi.cn |
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