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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3PN package Complement to type TIP35/35A/35B/35C DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP36/36A/36B/36C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO Collector-base voltage PARAMETER TIP36 TIP36A TIP36B VCEO CHA IN Collector current E SEM NG TIP36C TIP36 TIP36A Open base TIP36B TIP36C Open emitter DUC CON I CONDITIONS VALUE -40 TOR UNIT -60 V -80 -100 -40 -60 V -80 -100 Collector-emitter voltage VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Open collector -5 -25 -40 -5 V A A A W ae ae Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 125 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER TIP36 TIP36A IC=-30mA ;IB=0 TIP36B TIP36C VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage TIP36/36A TIP36B/36C TIP36 IC=-15A ;IB=-1.5A IC=-25A; IB=-5A IC=-15A ; VCE=-4V IC=-25A ; VCE=-4V VCE=-30V; IB=0 VCE=-60V; IB=0 VCE=-40V;VEB=0 VCE=-60V;VEB=0 VCE=-80V;VEB=0 CONDITIONS TIP36/36A/36B/36C SYMBOL MIN -40 -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -80 -100 -1.8 -4.0 -2.0 -4.0 V V V V ICEO Collector cut-off current ICES IEBO hFE-1 hFE-2 fT INC Collector cut-off current ANG H TIP36A TIP36B TIP36C MIC E SE VCE=-100V;VEB=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-1A ; VCE=-10V DUC ON TOR -1.0 -0.7 mA mA Emitter cut-off current DC current gain DC current gain Transition frequency -1.0 25 15 3 75 mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE TIP36/36A/36B/36C CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C CHA IN E SEM NG OND IC TOR UC 4 |
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