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| SEMiX151GD126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V Tj = 125 C VCES 1200 V VGES tpsc Tj = 150 C Tc = 25 C Tc = 80 C 1200 168 119 100 200 -20 ... 20 10 -40 ... 150 Tc = 25 C Tc = 80 C 152 105 100 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 200 700 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R)13 Trench IGBT Modules SEMiX151GD126HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Tj = 150 C Typical Applications * AC inverter drives * UPS * Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 100 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V VGE=VCE, IC = 4 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 100 A Tj = 125 C RG on = 1.7 RG off = 1.7 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 7.2 0.38 0.33 800 7.50 290 50 12 605 110 14 0.21 Tj = 25 C Tj = 125 C 5 1.7 2.00 1 0.9 7.0 11.0 5.8 0.1 2.1 2.45 1.2 1.1 9.0 13.5 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W K/W Remarks * Case temperatur limited to TC=125C max. * Not for new design Conditions min. typ. max. Unit GD (c) by SEMIKRON Rev. 13 - 03.12.2008 1 SEMiX151GD126HDs Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IF = 100 A Tj = 125 C di/dtoff = 2900 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode per diode 20 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 0.7 1 0.04 5 5 350 0,493 5% 3550 2% 0.9 0.7 5.0 7.0 min. typ. 1.6 1.6 1 0.8 6.0 8.0 125 26 11.5 max. 1.8 1.8 1.1 0.9 7.0 9.0 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 100 A VGE = 0 V chiplevel VF0 rF IRRM SEMiX(R)13 Trench IGBT Modules SEMiX151GD126HDs Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.36 K/W K/W nH m m K/W Nm Nm Nm g Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K Remarks * Case temperatur limited to TC=125C max. * Not for new design GD 2 Rev. 13 - 03.12.2008 (c) by SEMIKRON SEMiX151GD126HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 13 - 03.12.2008 3 SEMiX151GD126HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 13 - 03.12.2008 (c) by SEMIKRON SEMiX151GD126HDs SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 13 - 03.12.2008 5 |
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