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Datasheet File OCR Text: |
Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R HSBD435 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 Tstg ----Storage Temperature.............................. -55~150 T j ----Junction Temperature.................................... 150 PC----Collector DissipationTc=25........................ 36W VCBO ----Collector-Base Voltage................................. 32V VCEO ----Collector-Emitter Voltage.............................. 32V VCES ----Collector-Emitter Voltage.............................. 32V VEBO----Emitter-Base Voltage....................................... 5V IC----Collector Current Pulse ....................................... 7A IC----Collector Current DC .......................................... 4A IB----Base Current......................................................1A 1Emitter, E 2CollectorC 3BaseB ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Min Typ Max Unit Test Conditions ICBO IEBO *HFE1 *HFE2 *HFE3 *VCE(sat) *VBE(on) VCEO(sus) ft Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage Current Gain-Bandwidth Product 32 3 40 85 50 0.2 130 140 100 1 A mA VCB=32V, IE=0 VEB=5V, IC=0 VCE=5V, IC=10mA VCE=1V, IC=500mA VCE=1V, IC=2A 0.5 1.1 V V V MHz IC=2A, IB=0.2A VCE=1V, IC=2A IC=100mA, IB=0 VCE=1V, IC=250mA, * Pulse Test:PW=300S,Duty Cycle=1.5% Pulsed |
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