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| INCHANGE Semiconductor isc Product Specification 2SC2707 isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min.) *High Power Dissipation *Complement to Type 2SA1147 APPLICATIONS *Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 180 180 5 15 5 UNIT .cn mi e V V V A IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC 150 W Tj 150 Tstg Storage Temperature -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SC2707 isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 180 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 180 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 3.0 V ICBO Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product w w scs .i w VEB= 5V; IC= 0 IC= 1A ; VCE= 5V .cn mi e 55 30 80 100 A 100 A 160 IC= 5A ; VCE= 5V IC= 0.5A; VCE= 12V MHz isc Websitewww.iscsemi.cn |
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