![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
MBR1535CT, MBR1545CT SWITCHMODE] Power Rectifier Features and Benefits * * * * * * * Center-Tap Configuration Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175C Operating Junction Temperature 15 A Total (7.5 A Per Diode Leg) Pb-Free Package is Available* http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 15 AMPERES 35 and 45 VOLTS 1 2, 4 3 Applications * Power Supply - Output Rectification * Power Management * Instrumentation Mechanical Characteristics * * * * * * Case: Epoxy, Molded Epoxy Meets UL 94, V-0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C 4 MARKING DIAGRAM TO-220AB CASE 221A PLASTIC 1 2 3 AYWW MBR15x5CTG AKA A Y WW x G AKA = Assembly Location = Year = Work Week = 3 or 4 = Pb-Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2008 May, 2008 - Rev. 8 1 Publication Order Number: MBR1535CT/D MBR1535CT, MBR1545CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1535CT MBR1545CT Average Rectified Forward Current (TC = 163C) Per Diode Per Device Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 161C) Per Diode Symbol VRRM VRWM VR IF(AV) Value Unit V 35 45 A 7.5 15 15 150 1.0 -65 to +175 -65 to +175 1000 A A A C C V/ms IFRM IFSM IRRM Tstg TJ dv/dt Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Storage Temperature Range Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS PER DIODE Characteristic Maximum Thermal Resistance, Junction-to-Case (Min. Pad) Maximum Thermal Resistance, Junction-to-Ambient (Min. Pad) Symbol RqJC RqJA Value 3.0 60 Unit C/W C/W ELECTRICAL CHARACTERISTICS PER DIODE Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 7.5 Amps, TJ = 125C) (iF = 15 Amps, TJ = 125C) (iF = 15 Amps, TJ = 25C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125C) (Rated DC Voltage, TJ = 25C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0% Symbol vF Min - - - - - Typ 0.47 0.63 0.66 10 0.025 Max 0.57 0.72 0.84 mA 15 0.1 Unit V iR ORDERING INFORMATION Device MBR1535CT MBR1535CTG MBR1545CT MBR1545CTG Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBR1535CT, MBR1545CT i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 100 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 100 10 TJ = 150C 10 TJ = 150C 1.0 125C 1.0 125C 75C 25C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 75C 25C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100 TJ = 150C I , REVERSE CURRENT (mA) R I , REVERSE CURRENT (mA) R 10 125C 100C 1.0 75C 0.1 25C 100 TJ = 150C 10 125C 100C 1.0 75C 0.1 25C 0.01 0.01 0.001 0 10 20 30 40 50 0.001 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current , AVERAGE FORWARD CURRENT (AMPS) , AVERAGE FORWARD CURRENT (AMPS) 16 14 12 10 SQUARE WAVE 8.0 6.0 4.0 2.0 0 135 140 145 150 155 160 165 170 175 dc 16 RATED VOLTAGE APPLIED 14 12 10 8.0 dc 6.0 4.0 2.0 0 0 25 50 75 100 125 150 175 SQUARE WAVE dc RqJA = 16 C/W RqJA = 60 C/W (NO HEATSINK) F (AV) TC, CASE TEMPERATURE (C) I F (AV) I TA, AMBIENT TEMPERATURE (C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg http://onsemi.com 3 MBR1535CT, MBR1545CT P , AVERAGE FORWARD POWER DISSIPATION (WATTS) F (AV) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 900 TJ = 175C SQUARE WAVE C, CAPACITANCE (pF) 800 700 dc 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 10 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 TJ = 25C f = 1 MHz Figure 7. Forward Power Dissipation Figure 8. Typical Capacitance http://onsemi.com 4 MBR1535CT, MBR1545CT PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 6: PIN 1. 2. 3. 4. SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MBR1535CT/D |
Price & Availability of MBR1545CT
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |