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| PROCESS Small Signal Transistor NPN - RF Transistor Chip CP243 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 23,980 PRINCIPAL DEVICE TYPES CM5943 EPITAXIAL PLANAR 21.7 x 21.7 MILS 9.0 MILS 3.4 MILS DIAMETER 3.4 x 3.4 MILS Al - 10,000A Au - 12,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CP243 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) |
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