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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor DESCRIPTION *Collector Current -IC= -15A *Collector-Emitter Breakdown Voltage: V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C *Complement to Type BD545/A/B/C APPLICATIONS *Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BD546 BD546A VCBO Collector-Base Voltage BD546B VALUE -40 -60 V -80 UNIT BD546/A/B/C BD546C VCEO Collector-Emitter Voltage w w BD546 BD546A BD546B scs .i w -100 -40 -60 -80 V -100 -5 -15 3.5 W 85 150 -65~150 V A .cn mi e BD546C VEBO IC Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ Ta=25 Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-c PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.47 35.7 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BD546 BD546A IC= -30mA ;IB=0 B BD546/A/B/C CONDITIONS MIN -40 -60 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V -80 -100 BD546B BD546C VCE(sat)-1 VCE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage BD546 BD546A IC= -5A; IB= -0.625A B -0.8 -1.0 -1.8 V V V IC= -10A; IB= -2A IC= -10A; VCE= -4V VCE= -40V; VBE= 0 ICES Collector Cutoff Current ICEO Collector Cutoff Current w ww BD546B BD546C BD546/A BD546B/C scs .i B B VCE= -60V; VBE= 0 VCE= -80V; VBE= 0 VCE= -100V; VBE= 0 VCE= -30V; IB= 0 .cn mi e 60 25 10 -0.4 mA -0.7 VCE= -60V; IB= 0 VEB= -5V; IC= 0 IC= -1A; VCE= -4V IC= -5A; VCE= -4V IC= -10A; VCE= -4V -1.0 mA IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain mA Switching times ton toff Turn-on Time Turn-off Time 0.4 0.7 s s IC= -6A; IB1= -IB2= -0.6A; RL= 5; VBE(off)= 4V isc Websitewww.iscsemi.cn 2 |
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