 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SVD2N60T 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION 2 SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S1 3 1.Gate 2.Drain 3.Source structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 12 3 TO-220-3L FEATURES 2A,600V,RDS(on)(typ.)=4.0@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD2N60T Package TO-220-3L Marking SVD2N60T Shipping 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Repetitive Avalanche Energy Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS EAR TJ Tstg -55 -55 Value 600 30 2.0 8 44 0.22 120 5.4 +150 +150 Unit V V A A W W/C mJ mJ C C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2009.07.09 Page 1 of 6 SVD2N60T THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol R JC R JA Value 2.87 100 Unit C/W C/W ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note 2,3) VDS=480V,ID=2.0A, VGS=10V (Note 2,3) VDD=300V,ID=2.0A, RG=25 Test conditions VGS=0V, ID=250A VDS=600V, VGS=0V VGS=30V, VDS=0V VGS= VDS, ID=250A VGS=10V, ID=1.0A VDS=25V,VGS=0V, f=1.0MHZ Min. 600 --2.0 -----------Typ. ----4.0 320 30 3 13 12 73 14.3 9.3 2.0 3.3 Max. -1.0 100 4.0 4.6 380 45 5.6 30 60 ns 100 70 13 --nC pF Unit V A nA V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. L=56mH, IAS=2.0A,VDD=50V,RG=25,starting TJ=25C; Symbol IS ISM VSD Trr Qrr Test conditions Integral Reverse P-N Junction Diode in the MOSFET IS=2.0A,VGS=0V IS=2.0A,VGS=0V, dIF/dt=100A/S Min. -----Typ. ---230 1.0 Max . 2 8.0 1.4 --A V ns C Unit 2. Pulse Test: Pulse width 300 s,Duty cycle 2%; 3. Essentially independent of operating temperature. HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2009.07.09 Page 2 of 6 SVD2N60T NOMENCLATURE TYPICAL CHARACTERISTICS Figure 1. On-Region Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom: 4.5 V Figure 2. Transfer Characteristics 100.00 10.00 4.5V 1.0 150 1.00 25 -55 0.10 Note: 1. 250 s Pulse Test 2. TC=25 C Note: 1.VGS=40V 2. 250 s pulse test 0.1 1 10 0.01 0 2 4 6 8 10 VDS Drain-source voltage[V] VGS Gate-Source Voltage [V] Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage 10.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10.0 8.0 VGS=10V VGS=20V 1.0 6.0 4.0 150 25 Note: 1.VGS=0V 2. 250 s pulse test 2.0 Note:TJ=25 C 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 ID Drain Current [A] VSD Source-Drain Voltage [V] HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2009.07.09 Page 3 of 6 Http://www.silan.com.cn BVDSS(Normalized) Drain-Source Breakdown Voltage Capasistance [pF] RDS(ON) (Normalized) Drain-Source On-Resistance VGS Gate-Source Voltage [V] TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 SVD2N60T 2009.07.09 Page 4 of 6 SVD2N60T TYPICAL TEST CIRCUIT HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2009.07.09 Page 5 of 6 SVD2N60T PACKAGE OUTLINE TO-220-3L(One) UNIT: mm TO-220-3L Two UNIT: mm 15.1~15.9 HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn 13.10.5 3.95MAX 6.10~6.80 REV:1.2 2009.07.09 Page 6 of 6 |
Price & Availability of SVD2N60T
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |