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| SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package D BV DSS R DS(ON) ID 20V 14m 45A G S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=125 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 12 45 20 140 48 0.38 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.6 110 Unit /W /W Rev.2.01 6/26/2003 www.SiliconStandard.com 1 of 6 SSM9918H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 26 19 1.5 10.5 7.5 83 18 23 500 310 125 Max. Units 14 28 1.2 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=18A VGS=2.5V, ID=9A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125oC) o VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS= 12V ID=18A VDS=20V VGS=5V VDS=10V ID=18A RG=3.3,VGS=5V RD=0.56 VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V Tj=25, IS=45A, VGS=0V Min. - Typ. - Max. Units 45 140 1.3 A A V Pulsed Source Current ( Body Diode ) 1 Forward On Voltage 2 Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. Rev.2.01 6/26/2003 www.SiliconStandard.com 2 of 6 SSM9918H,J 120 80 T C =25 C o V G =4.5V T C =150 o C V G =4.5V V G =4.0V V G =4.0V ID , Drain Current (A) 80 60 V G =3.5V V G =3.5V ID , Drain Current (A) V G =3.0V 40 V G =3.0V 40 V G =2.5V 20 V G =2.5V 0 0 1 2 3 4 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 26 1.8 I D = 18 A 24 I D =18A 1.6 T C =25 C 22 o V G =4.5V 20 Normalized R DS(ON) 1 2 3 4 5 6 1.4 RDSON (m ) 18 1.2 16 1.0 14 0.8 12 10 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Rev.2.01 6/26/2003 www.SiliconStandard.com 3 of 6 SSM9918H,J 50 60 50 40 ID , Drain Current (A) 40 30 PD (W) 20 10 0 25 50 75 100 125 150 30 20 10 0 0 50 100 150 T c , Case Temperature ( C) o T c , Case Temperature ( C) o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 DUTY=0.5 Normalized Thermal Response (R thjc) 0.2 100 10us ID (A) 0.1 0.1 0.05 100us 10 0.02 PDM SINGLE PULSE 0.01 t T 1ms T c =25 o C Single Pulse 1 1 10 100 10ms 100ms Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Rev.2.01 6/26/2003 www.SiliconStandard.com 4 of 6 SSM9918H,J 12 10000 f=1.0MHz I D =18A 10 V DS =10V V DS =15V VGS , Gate to Source Voltage (V) 8 V DS =20V C (pF) 1000 Ciss 6 Coss 4 100 Crss 2 0 0 5 10 15 20 25 30 35 10 1 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.6 1.4 10 1.2 T j =150 o C VGS(th) (V) 1.2 1.6 T j =25 o C IF (A) 1 1 0.8 0.6 0.1 0.4 0.01 0 0.4 0.8 0.2 -50 0 50 100 150 V SD (V) Junction Temperature ( C ) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Rev.2.01 6/26/2003 www.SiliconStandard.com 5 of 6 SSM9918H,J RD VDS 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 5v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + RATED VDS QGS QGD VGS I G I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Rev.2.01 6/26/2003 www.SiliconStandard.com 6 of 6 |
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