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| Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR KSH13009H HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature---------- 55~150ae T j Junction Temperature----------150ae PCCollector Dissipation T c=25ae ------- (c) 130W VCBO Collector-Base Voltage----------700V VCEOCollector-Emitter Voltage---------400V VEBO Emitter-Base Voltage-----------9V ICCollector Current DC(c)-----------12A IBBase Current------------ - 6A - - TO-3P 1D Base B 2D Collector C 3D Emitter, E ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Cut-off Current Min 400 1 8 40 Typ Max Unit V m A Test Conditions BVCEO IEBO HFE 1(c) HFE 2(c) IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=5A VCE=5V, IC=8A DC Current Gain 6 30 1 V V ( sat1(c) Collector- Emitter Saturation Voltage CE V ( sat2(c) CE V ( sat3(c) CE V (sat1) BE V (sat2) BE Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 180 IC=5A, IB =1A IC=8A, IB =1.6A IC=12A, IB =3A IC=5A, IB=1A IC=8A, IB =1.6A VCB=10V,f=0.1MHz 1.5 3 1.2 V V V 1.6 V pF 1.1 3.0 0.7 MHz VCE =10V,IC=0.5A VCC=125V, IC=8A, |I s IB1 =1.6A,IB2 =-1.6A |I s |I s RL=15.6| Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR KSH13009H Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR KSH13009H |
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