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| HTP20-600 HTP20-600 600V 20A TRIAC VDRM = 600 V IT(RMS) = 20A FEATURES Symbol Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=20A) High Commutation dv/dt 1.T1 2.T2 3.Gate General Description The TRIAC HTP20-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. 1. T1 2. T2 3. Gate Absolute Maxim um Ratings Symbol VDRM IT(RMS) ITSM V GM IGM PGM TSTG Tj (Ta=25 ) Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current (Ta = 90 ) Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) Peak Gate V oltage Peak Gate Current Peak Gate Power Dissipation Storage Temperature Range Operating Temperature 50Hz 60Hz Value 600 20 170 190 10 2 5 -40 to +125 -40 to +125 Units V A A V A W SEMIHOW REV.1.0 Jan 2006 HTP20-600 Electrical Characteristics Symbol IGT V GT VGD (dv/dt)c Parameter Gate Trigger Current Gate Trigger Voltage (Ta=25) Test Conditions VD=6V RL=10 , VD=6V RL=10 , 1+, 1-, 31+, 1-, 3- M in Typ M ax 30 1.5 Units mA V V Non Trigger Gate Tj =125 VD=1/2VDRM , Voltage Critical Rate of Rise of , DRM Tj =125 VD=2/3V Off-State Voltage at (di/dt)c=-10A/ms Communication Holding Current Repetitive Peak OffState Current VD=VDRM, Single Phase, Half W ave, Tj=125 0.2 8.0 V/uS IH IDRM V TM 25 2.0 1.4 mA mA V Peak On-State V oltage IT=6A, Inst, Measurement Thermal Characteristics Symbol RTH(J-C) Parameter Thermal Resistance Test Conditions Junction to Case M in Typ M ax 1.4 Units /W SEMIHOW REV.1.0 Jan 2006 HTP20-600 Performance Curves Fig 1. Gate Characteristics Fig 2.On-State Voltage 101 On-state Current (A) 102 Gate Voltage (V) 100 101 10-1 101 102 103 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current (mA) On-state Voltage (V) Fig 3. Gate Trigger Voltage vs. Junction Temperature 10 20 18 Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation (W) 16 14 12 10 8 6 4 2 VGT(t) VGT(25) 1 0.1 -50 0 50 100 150 0 0 4 8 12 16 20 24 Junction Temperature () RMS On-State Current (A) Fig 5. On State Current vs. Allowable Case Temperature 130 120 110 100 90 80 70 60 0 4 8 12 16 20 24 240 Fig 6. Surge On-State Current Rating (Non-Repetitive) Surge On-State Current (A) Allowable Case Temp () 200 180 120 80 40 0 100 101 102 RMS On-State Current (A) Time (Cycles) SEMIHOW REV.1.0 Jan 2006 HTP20-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig8. Transient Thermal Impedance Transient Thermal Impedance (/W) IGT(t) IGT(25) 1 1 0.1 -50 0 50 100 150 0.1 10-2 10-1 100 101 102 Junction Temperature () Fig 7. Gate Trigger Characteristics Test Circuit 10 10 A 6V V RG A 6V V RG Test Procedure I Test Procedure II 10 A 6V V RG Test Procedure III SEMIHOW REV.1.0 Jan 2006 HTP20-600 Package Dimension HTP20-600 (TO-220) SEMIHOW REV.1.0 Jan 2006 |
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