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| JMnic Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Low collector saturation voltage Complement to type 2SD1603 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -7 -8 -12 40 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA, RBE= IE=-50mA, IC=0 IC=-4A ,IB=-8mA IC=-8A ,IB=-80mA IC=-4A ,IB=-8mA IC=-8A ,IB=-80mA VCB=-60V, IE=0 VCE=-50V, RBE= IC=-4A ; VCE=-3V ID=8A 1000 MIN -60 -7 2SB1103 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 |I |I V V V V A A 3.0 V Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A ,IB1=-IB2=-8mA 0.5 3.0 1.0 |I |I |I s s s 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1103 Fig.2 Outline dimensions 3 |
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