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TPC8212-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8212-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
* * * * * * * Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 5.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: |Yfs| =14 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR Tch Tstg Rating 30 30 20 6 24 1.5 W 1.1 0.75 W 0.45 46.8 6 0.10 150 -55150 mJ A mJ Unit V V V A
JEDEC JEITA TOSHIBA
2-6J1E
Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single-pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range
Weight: 0.085 g (typ.)
Circuit Configuration
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8212-H
Thermal Characteristics
Characteristic Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit
Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b)
125 C/W 167
Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b)
Single-device operation (Note 3a)
278
Marking
TPC8212 H
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150C during use.
Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 6.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: * on the lower left of the marking indicates Pin 1. * Weekly code: (three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (the last digit of the calendar year)
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TPC8212-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff VDD 24 V, VGS = 10 V, ID = 6 A - VDD 24 V, VGS = 5 V, ID = 6 A - VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3 A VGS = 10 V , ID = 3 A VDS = 10 V , ID = 3 A Min -- -- 30 15 1.1 -- -- 7 -- -- -- -- Typ. -- -- -- -- -- 21 16 14 840 105 385 5 Max 10 10 -- -- 2.3 27 21 -- -- -- -- -- pF V m S Unit A A V
Turn-on time Switching time Fall time
--
11
-- ns
--
7
--
Turn-off time Total gate charge (gate-source plus gate-drain) (Note 7) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge
-- VDD 24 V, VGS = 10 V, ID = 6 A -
25 16 9 3.1 4.1 5.5
-- nC
Qg Qgs1 Qgd QSW
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition -- IDR = 6 A, VGS = 0 V Min -- -- Typ. -- -- Max 24 -1.2 Unit A V
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TPC8212-H
ID - VDS
5 10 8 4 4 6 10 3.5 3.4 8 10 8 6 4
ID - VDS
Common source Ta =25C Pulse test 3.6 3.5 6
Drain current ID (A)
3
3.3
2
3.2
Drain current ID (A)
Common source Ta = 25C Pulse test
4
3.3
1
VGS = 3V
2
VGS = 3.1V
0 0
0.2
0.4
0.6
0.8
1
0 0
0.4
0.8
1.2
1.6
2
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID - VGS
10 0.3
VDS - VGS
Common source
Drain-source voltage VDS (V)
Common source 8 VDS = 10 V Pulse test
Ta = 25 Pulse test 0.2
Drain current ID (A)
6 100 4
Ta = -55C
ID = 6 A 0.1 3 1.5 0 0
25 2
0 0
1
2
3
4
5
2
4
6
8
10
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID (S)
100 100
RDS (ON) - ID
Forward transfer admittance |Yfs|
Drain-source ON-resistance RDS (ON) (m)
4.5
10
Ta = -55C 25 100
10
VGS = 10 V
1 Common source VDS = 10 V 0.1 0.1 Pulse test 1 10 100
Common source Ta = 25C 1 0.1 Pulse test 1 10 100
Drain current ID (A)
Drain current ID (A)
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TPC8212-H
RDS (ON) - Ta
50 Common source Pulse test 40 ID = 1.5A,3A,6A 30 100 Common source Ta = 25C Pulse test
IDR - VDS
Drain-source ON-resistance RDS (ON) (m)
Drain reverse current IDR (A)
10 3
10
20
VGS = 4.5 V
ID = 1.5A,3A,6A
4.5
10
VGS = 10 V
1 VGS = 0 V 0 -80 -40 0 40 80 120 160 1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Ambient temperature
Ta
(C)
Drain-source voltage VDS
(V)
Capacitance - VDS
10000 2.5
Vth - Ta
(pF)
2.0 1000 Ciss Coss
Gate threshold voltage Vth (V)
Capacitance C
1.5
1.0 Common source VDS = 10 V 0.5 ID = 1 mA Pulse test
100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10
Crss
100
0 -80
-40
0
40
80
120
160
Drain-source voltage VDS
(V)
Ambient temperature
Ta
(C)
PD - Ta
2
Dynamic input/output characteristics
50 20
Drain-source voltage VDS (V)
1.6
(1)
Drain power dissipation PD (W)
VDD = 6 V 30 VDS 20 VGS 10 24 12 8 12
1.2
(2)
0.8
(3)
Common source ID = 6 A Ta = 25C Pulse test
(4) 0.4
4
0 0
40
80
120
160
0 0
6
12
18
24
0 30
Ambient temperature
Ta
(C)
Total Gate charge
Qg
(nC)
5
2006-11-16
Gate-source voltage VGS
Device mounted on a Glass-epoxy board (a)(Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation(Note 3b) Device mounted on a glass-epoxy board(b)(Note 2b) (3)Single-device operation(Note 3a) (4)Single-device value at dual operation(Note 3b) t=10s
40
16
(V)
TPC8212-H
rth - tw
1000 Single - pulse
(4) (3) (2)
Transient thermal impedance rth (/W)
100
(1)
10 Device mounted on a glass-epoxy board (a) (note 2a) (1)Single-device opration (Note 3a) (2)Single-device value at dual opration (Note 3b) 1 Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device opration (Note 3a) (4)Single-device value at dual opration (Note 3b) 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw (s)
Safe operating area
100 Single-device value at dual opration (note 3b) ID max (Pulse) *
Drain current ID (A)
t =1ms * 10 10ms *
1 * Single - pulse Ta=25 Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100
Drain-source voltage VDS
(V)
6
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TPC8212-H
7
2006-11-16

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