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| S T S 8215 S amHop Microelectronics C orp. J an. 10 2008 V er1.0 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 5A R DS (ON) ( m ) Max 27.5 @ V G S = 4.0V 38 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 D2 S OT26 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 10 5 24 1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 R JA 100 C /W S T S 8215 E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 10V,VDS = 0V VDS = VGS, ID = 250uA VGS = 4.0V, ID = 5A VGS = 2.5V, ID = 3A VDS = 5.0V, ID= 5A Min Typ C Max Unit 20 1 10 0.5 0.9 23 30 16 540 160 100 1.5 27.5 38 V uA uA V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =8V, VGS = 0V f =1.0MHZ PF PF PF S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGEN = 4.5V, R L = 10 ohm R GE N = 10 ohm VDS =10V, ID =5A,VGS =4V VDS =10V, ID =5A,VGS =2.5V VDS =10V, ID = 5 A VGS =4V 2 15 20 36 11 6.4 4.6 1.1 2.8 ns ns ns ns nC nC nC nC S T S 8215 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.25A Min Typ Max Unit 0.76 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 15 V G S =8V V G S =3V 12 V G S =2.5V 12 V G S =2V 16 ID, Drain C urrent(A) ID, Drain C urrent (A) 9 8 6 T j=125 C 3 25 C 0 0.0 -55 C 4 V G S =1.5V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.4 0.8 1.2 1.6 2.0 2.4 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 1.5 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 50 1.4 1.3 1.2 1.1 1.0 0 V G S =2.5V ID=3A V G S =4V ID=5A R DS (on) (m ) 40 V G S =2.5V 30 20 10 1 V G S =4V 1 4 8 12 16 20 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature S T S 8215 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.20 ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=5A Is , S ource-drain current (A) 50 10.0 5.0 125 C R DS (on) (m ) 40 30 20 75 C 10 0 25 C 25 C 75 C 125 C 0 1 2 4 6 8 1.0 0 0.3 0.6 0.9 1.2 1.5 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T S 8215 C is s 500 V G S , G ate to S ource V oltage (V ) 600 5 4 3 2 1 0 VDS =10V ID=5A C , C apacitance (pF ) 400 300 C os s 200 C rs s 100 0 0 2 4 6 8 10 12 6 0 1 2 3 4 5 6 7 8 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 600 S witching T ime (ns ) ID, Drain C urrent (A) Tr 50 30 10 R D 100 60 10 ON S( )L im it 10 ms TD(off) Tf TD(on) 10 1s 0m s 1 DC 1 1 V DS =10V ,ID=1A V G S =4.5V 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 60 6 10 60 100 300 600 R g, G ate R es is tance () V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 10 Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T S 8215 PA C K A G E O U T L I N E D I M E N S I O N S SOT26 7 S T S 8215 SOT 26 Tape and Reel Data SOT 26 Carrier Tape 3.50 + 0.05 1.75 + 0.10 +0.10 1.50 0.00 4.00 + 0.10 2.00 + 0.05 A 8.0 + 0.30 B B A 0.25 + 0.05 4.00 + 0.10 3.3 + 0.1 5 R0 .3 +0.10 1.00 0.00 5M ax R0 .3 M ax R0 . Bo 3.2 + 0.1 3 R0 .3 1.50 178.0 + 0.5 9.0 SOT 26 Ko 1.5 + 0.1 SECTION B-B SECTION A-A SOT 26 Reel 2.2 + 0.5 10.6 13.5 + 0.5 SCALE 2:1 8 60 + 0.5 +1.5 -0 |
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