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| HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Typical Applications This HMC-APH510 is ideal for: * Point-to-Point Radios Features Output IP3: +35 dBm P1dB: +26 dBm Gain: 20 dB Supply Voltage: +5V 50 Ohm Matched Input/Output 3 LINEAR & POWER AMPLIFIERS - CHIP * Point-to-Multi-Point Radios * Military & Space Die Size: 3.76 x 0.92 x 0.1 mm Functional Diagram General Description The HMC-APH510 is a high dynamic range, three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 37 and 40 GHz. The HMCAPH510 provides 20 dB of gain, and an output power of +26 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH510 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25 C, Vdd1 = Vdd2 = Vdd3 = 5V, Idd1 + Idd2 + Idd3 = 640 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Output Third Order Intercept (IP3) Supply Current (Idd1+Idd2+Idd3) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ. -0.5V) to achieve Idd total = 640 mA 25 33 18 Min. Typ. 37 - 40 20 16 7 26 35 640 Max. Units GHz dB dB dB dBm dBm mA 3 - 196 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Linear Gain vs. Frequency 22 20 18 16 14 12 10 36 37 38 39 40 41 42 FREQUENCY (GHz) Fixtured Pout vs. Frequency 38 36 34 POUT (dB) GAIN (dB) 32 30 28 26 24 22 36 37 38 P1dB P3 @ 18dBm/ Tone 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 197 39 40 41 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -4 -8 -12 -16 -20 -24 -28 36 37 38 39 40 41 42 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -4 RETURN LOSS (dB) -8 -12 -16 -20 -24 -28 36 37 38 39 40 41 42 FREQUENCY (GHz) RETURN LOSS (dB) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage +5.5 Vdc -1 to +0.3 Vdc 10 dBm 42.2 C/W 180 C -65 C to +150 C 110 mA 300 mA 300 mA 3 LINEAR & POWER AMPLIFIERS - CHIP RF Input Power Thermal Resistance (Channel to die bottom) Channel Temperature Storage Temperature Drain Bias Current (Idd1) Drain Bias Current (Idd2) Drain Bias Current (Idd3) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002" [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 198 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Pad Descriptions Pad Number 1 2 Function RFIN RFOUT Description This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Interface Schematic 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 199 6, 8 Vdd1, Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. 3, 4 Vdd3 Power Supply Voltage for the amplifier. See assembly for required external components. 5, 7, 9 Vgg1, Vgg2, Vgg3 Gate control for amplifier. Please follow "MMIC Amplifier Biasing Procedure" application note. See assembly for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. 3 - 200 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004") Thick GaAs MMIC Ribbon Bond 0.076mm (0.003") 3 RF Ground Plane 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.102mm (0.004") Thick GaAs MMIC Ribbon Bond 0.076mm (0.003") RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010" Thick Alumina Thin Film Substrate Figure 2. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 201 LINEAR & POWER AMPLIFIERS - CHIP |
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