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| General Purpose Transistor SMD Diodes Specialist MMBT3906-HF RoHS Device Features -Halogen Free -Epitaxial planar die construction -As complementary type, the NPN (PNP) SOT-23 0.119 (3.00) 0.110 (2.80) 3 0.056 (1.40) 0.047 (1.20) transistor MMBT3906-HF is recommended 1 0.083 (2.10) 2 0.066 (1.70) 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) Collector 3 0.044 (1.10) 0.035 (0.90) 1 Base 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 0.007 (0.20) min 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings(at TA=25 Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Collector dissipatioin Storage temperature and junction temperature O C unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TSTG , TJ O Min Typ Max -40 -40 -5 -0.2 0.3 Unit V V V A W C -55 +150 Electrical Characteristics (at TA=25 Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time C unless otherwise noted) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT td tr ts tf 250 35 35 225 75 100 60 -0.3 -0.95 V V Mhz nS nS nS nS REV:A Conditions IC =-100A , IE=0 IC =-1mA , IB=0 IE =-100A , IC=0 VCB=-40V , IE=0 VCE=-40V , IB=0 VEB=-5V , IC=0 VCE=-1V , IC=-10mA VCE=-1V , IC=-50mA IC=-50mA , IB=-5mA IC=-50mA , IB=-5mA VCE=-20V , IC=-10mA f=100MHZ VCC=-3.0V , VBE=-0.5V IC=-10mA , IB1=-1.0mA VCC=-3.0Vdc , IC=-10mA IB1=IB2=-1.0mA Min -40 -40 -5 Max Unit V V V -0.1 -0.1 -0.1 300 A A A QW-HTR01 Page 1 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMBT3906-HF) Fig.1 Capacitance 10 5000 VCC=40V IC/IB=10 Cobo Fig. 2 - Charg data Capacitance (pF) 5 Cibo Q, Charge (pC) 1000 QT QA 100 1 0.1 1 10 40 50 1.0 10 100 200 Reverse bias (V) Ic- Collector current (mA) Fig. 3 - Turn-On Time 500 IC/IB=10 Fig. 4 - Fall time 500 VCC=40V IB1=IB2 tf, Fall time (nS) 100 100 Time (nS) IC/IB=20 125 oC tr@VCC=3.0V 15V 40V IC/IB=10 10 td@VoB=0V 2.0V 10 5 5 1 10 100 200 1 10 100 200 Ic - Collector current (mA) Ic - Collector current (mA) Figure 5 5 12 Figure 6 Source resistance=200 IC=1.0mA Source resistance=200 IC=0.5mA Source resistance=2.0K IC=50A f=1.0kHz 10 IC=1.0mA IC=0.5mA NF, Noise Figure (dB) NF, Noise figure (dB) 4 8 3 6 2 4 IC=50A IC=100A 1 Source resistance=2.0K IC=100A 2 0 0.1 0 0.1 1 10 100 1 10 100 Frequency (kHz) Rg, Source resistance (K) REV:A QW-HTR01 Page 2 General Purpose Transistor SMD Diodes Specialist o h Parameters (VCE=-10Vdc, f=1.0kHz, TA=25C) Fig.7 Current gain 300 100 Fig. 8 - Output Admittance hoe, Output admittance (mhos) hfe, DC current gain 200 50 100 70 50 10 30 0.1 1.0 5.0 10 5 0.1 1.0 10 IC, Collector current (mA) Ic- Collector current (mA) Fig. 9- Input impedance 20 10 10 Fig. 10- Voltage feedback ratio 1.0 hre, Voltagefee dback ratio (x10-4) 1.0 10 hie, lnput impedance (k) 1.0 0.2 0.1 0.5 0.1 1.0 10 Ic - Collector current (mA) Ic - Collector current (mA) Fig.11- "ON" voltages o V, Temperature Coefficients (mV/C) Fig.12-Temperature coefficients 1.0 o +25C to +125C o 1.0 o Tj=25C VBE(sat)@ IC/IB=10 0.8 0.5 VC For VCE(sat) V, Voltage (Volts) VBE@ VCE=1.0V 0.6 0 -55C to +25C -0.5 o +25C to +125C o o o 0.4 -1.0 -55C to +25C -1.5 -2.0 VB o o VCE(sat)@ IC/IB=10 0.2 For VBE(sat) 0 1.0 10 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, Collector current (mA) IC, Collector current (mA) REV:A QW-HTR01 Page 3 General Purpose Transistor SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 3.10 0.10 0.122 0.004 B 2.85 0.10 0.112 0.004 C 1.40 0.10 0.035 0.004 d 1.55 0.10 0.061 0.004 D 178 1 7.008 0.040 D1 50.0 MIN. 1.969 MIN. D2 13.0 0.20 0.512 0.008 SOT-23 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.05 0.079 0.002 W 8.00 0.30 0.315 0.012 W1 14.4 MAX. 0.567 MAX SOT-23 (mm) (inch) REV:A QW-HTR01 Page 4 Comchip Technology CO., LTD. General Purpose Transistor SMD Diodes Specialist Marking Code Park Number MMBT3906-HF 3 Marking Code 2A 2A 1 2 Suggested PAD Layout SOT-23 SIZE (mm) A B C D E 0.80 0.65 1.90 2.02 3.03 (inch) 0.031 D E A 0.025 0.075 0.080 B 0.120 C Standard Package Qty per Reel Case Type (Pcs) SOT-23 3000 Reel Size (inch) 7 REV:A QW-HTR01 Page 4 Comchip Technology CO., LTD. |
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