 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LED - Chip Preliminary Radiation Infrared Type DDH 10.04.2007 Technology AlGaAs/AlGaAs EL-770-27 rev. 03/06 Electrodes N (cathode) up 360 120 typ. dimensions (m) typ. thickness 150 (25) m cathode gold alloy, 1.5 m anode gold alloy, 0.5 m, dotted, 25% covered LED-05 Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power1 Radiant power2 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 Symbol Min Typ Max Unit IF = 20 mA IR = 100 A IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA VF VR e e p 0.5 tr, tf 760 5 2.0 1.7 2.1 V V 2.7 5.0 770 30 40 780 mW mW nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type EL-770-27 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
Price & Availability of ELC-770-27
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |