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DU1230S
RF Power MOSFET Transistor 30W, 2-175MHz, 12V
Features
M/A-COM Products Released; RoHS Compliant
Package Outline
* * * * * *
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices Specifically designed for 12 volt applications
ABSOLUTE MAXIMUM RATINGS AT 25 C
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG JC Rating 40 20 8 175 200 -55 to +150 1 Units V V A W C C C/W
LETTER MILLIMETERS MIN 24.64 18.29 20.07 9.47 6.22 5.64 2.92 2.29 4.04 6.58 .10 MAX 24.89 18.54 20.83 9.73 6.48 5.79 3.30 2.67 4.55 7.39 .15 INCHES MIN .970 .720 .790 .373 .245 .222 .115 .090 .159 .259 .004 MAX .980 .730 .820 .383 .255 .228 .130 .105 .179 .291 .006 DIM A B C D E F G H J K
TYPICAL DEVICE IMPEDANCE
F (MHz) 30 100 175 ZIN () 12.0 - j14.0 4.0 - j8.0 2.0 - j2.5 ZLOAD () 2.5 - j3.0 2.5 - j1.0 2.5 - j0.5
VDD = 12V, IDQ = 200mA, POUT = 30W
ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS
GP
L
Min
40 2..0 1.0 9.0 60 -
Max
2.0 2.0 6.0 100 120 24 30:1
Units
V mA A V S pF pF pF dB % -
Test Conditions
VGS = 0.0 V , IDS = 10.0 mA VGS = 15.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 200 mA VDS = 10.0 V , IDS = 2000 mA , VGS = 1.0 V VDS = 12.0 V , F = 1.0 MHz VDS = 12.0 V , F = 1.0 MHz VDS = 12.0 V , F = 1.0 MHz
VDD = 12.0 V, IDQ = 200 mA, POUT = 30 W F =175 MHz VDD = 12.0 V, IDQ = 200 mA, POUT = 30 W F =175 MHz VDD = 12.0 V, IDQ = 200 mA, POUT = 30 W F =175 MHz
D VSWR-T
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU1230S
RF Power MOSFET Transistor 30W, 2-175MHz, 12V
Typical Broadband Performance Curves EFFICIENCY VS FREQUENCY VDD =12 V IDQ=200 mA POUT=30 W GAIN VS FREQUENCY VDD=12 V IDQ=200 mA POUT=30W
M/A-COM Products Released; RoHS Compliant
80 70 EFFICIENCY (%) 60 50 40 30 20 10 0
20 18 GAIN (Db) 16 14 12 10 25
50
150
200
50
100 FREQUENCY (MHz)
150
175
FREQUENCY (MHz)
40 POWER OUTPUT (W) 30 20 10 0 0
POWER OUTPUT VS POWER INPUT VDD =12 V IDD =200 mA
100MHz
40 POWER OUTPUT (W) 30 20 10 0
POWER OUTPUT VS SUPPLY VOLTAGE IDQ =200 mA F=175 MHz PIN =3.0 W
30MHz 175MHz
0.2
0.3
1
2
3
4
5
6
7
6
POWER INPUT (W)
10 SUPPLY VOLTAGE (V)
15
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU1230S
RF Power MOSFET Transistor 30W, 2-175MHz, 12V
TEST FIXTURE SCHEMATIC
M/A-COM Products Released; RoHS Compliant
TEST FIXTURE ASSEMBLY
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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