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 TPC8021-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8021-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
* * * * * * * Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| =19 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 20 11 44 1.9 Unit V V V A
JEDEC JEITA TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Pulsed (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)
Drain power dissipation
W
Circuit Configuration
8 7 6 5
Drain power dissipation
1.0
W
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy
79 11 0.14 150 -55 to 150
mJ A mJ C C 1 2 3 4
Note: Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8021-H
Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-a)
125
C/W
Marking (Note 5)
TPC8021 H
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 11 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPC8021-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 11A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 ID = 5.5 A VOUT RL = 2.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VDS = 10 V, ID = 5.5 A Min 30 15 1.1 10 Typ. 18.5 13.5 19 640 75 300 4 8 4 18 11 6.3 2.2 2.6 3.6 Max 10 10 2.3 25 17 ns nC pF Unit A A V V m S
VDD 15 V - Duty < 1%, tw = 10 s = VDD 24 V, VGS = 10 V, ID = 11 A - VDD 24 V, VGS = 5 V, ID = 11 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 15 A, VGS = 0 V Min Typ. Max 44 -1.2 Unit A V
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2006-11-16
TPC8021-H
ID - VDS
10 8 4 3.5 3.2 5 6 2.9 2.8 6 2.7 4 3.0 Common source Ta = 25C Pulse test 20 6 8 16 10 12 4 5 3.5 4.5
ID - VDS
Common source 3.3 3.2 Ta = 25C Pulse test 3.1 3.0 2.9 8 2.8 2.7 4 VGS = 2.5 V
Drain current ID (A)
2.6
2
VGS = 2.4 V
0
Drain current ID (A)
10
8
10
0
2
4
6
8
0
0
4
8
12
16
20
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID - VGS
20 Common source 0.4 VDS = 10 V Pulse test
VDS - VGS
Common source Ta = 25C Pulse test 0.3
16
12
Drain-source voltage VDS (V)
Drain current ID (A)
0.2
8 Ta = -55C 4 100 25 0
ID = 11 A
0.1
5.5
2.8 0 1 2 3 4 5 0.0 0 2 4 6 8 10
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
|Yfs| - ID
100 Common source VDS = 10 V Pulse test Ta = -55C 10 25 100
RDS (ON) - ID
Common source Ta = 25C Pulse test
(S)
Forward transfer admittance |Yfs|
Drain-source ON-resistance RDS (ON) (m)
4.5 VGS = 10 V
100
10
1
0.1 0.1
1
10
100
1 0.1
1
10
100
Drain current ID (A)
Drain current ID (A)
4
2006-11-16
TPC8021-H
RDS (ON) - Ta
40 Common source Pulse test 32 ID = 2.8A,5.5A,11A 100 Common source Ta = 25C Pulse test
IDR - VDS (A) Drain reverse current IDR
Drain-source ON-resistance RDS (ON) (m)
10 3 10 4.5
24 VGS = 4.5 V 16 ID = 2.8A,5.5A,11A
VGS = 10 V 8
1 VGS = 0 V 1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0 -80
-40
0
40
80
120
160
Ambient temperature
Ta
(C)
Drain-source voltage VDS
(V)
10000
Capacitance - VDS
2.0
Vth - Ta Gate threshold voltage Vth (V)
1.6
(pF)
1000
Ciss
1.2
Capacitance C
Coss
0.8 Common source 0.4 VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160
100 Crss
10 0.1
Common source Ta = 25C f = 1 MHz VGS = 0 V 1
0.0 -80 10 100
Ambient temperature
Ta
(C)
Drain-source voltage VDS
(V)
2.0
PD - Ta (V)
(1)
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b)
Dynamic input/output characteristics
50 Common source ID = 11 A 40 Ta = 25C Pulse test 30 VDS 20 24 V VDD = 6 V 12 V 8 12 16 20
(W)
Drain power dissipation PD
1.6
(2) 0.8
0.4
10
4
0 0 40 80 120 160
0 0
4
8
12
16
0 20
Ambient temperature
Ta
(C)
Total gate charge Qg
(nC)
5
2006-11-16
Gate-source voltage
1.2
t = 10 s
Drain-source voltage VDS
VGS (V)
TPC8021-H
rth - tw
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a)
rth (C/W)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
100 (1)
Transient thermal impedance
10
1
Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe operating area
100 ID MAX (Pulse) * t =1 ms * 10 10 ms *
Drain current ID (A)
1 *: Single-pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1 10
0.1
VDSS MAX 100
0.1
Drain-source voltage VDS
(V)
6
2006-11-16
TPC8021-H
7
2006-11-16


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