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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K100 DESCRIPTION *High DC current gain *Collector-Emitter Sustaining VoltageVCEO(SUS)= 100V(Min) *Complement to type PMD11K100 APPLICATIONS *Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 100 UNIT V Collector Current -Continuous Collector Current-Peak Base Current ww w PARAMETER scs .i 100 5.0 12 20 0.2 150 150 -65~200 .cn mi e V V A A A PC Tj Tstg Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature W THERMAL CHARACTERISTICS SYMBOL Rth j-c MAX 1.17 UNIT /W ThermalResistance, Junction to Case isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD10K100 MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 24mA B 2.8 V VBE(on) Base-Emitter On Voltage IC= 6A; VCE= 3V VCE= 100V; RBE= 1K VCE= 100V; RBE= 1K, TC=150 VEB= 5V; IC= 0 2.8 1.0 5.0 2.0 V ICER Collector Cutoff current mA IEBO Emitter Cut-off current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance w w scs .i w IC= 6A; VCE= 3V IC= 5A; VCE= 3V, f= 1kHz .cn mi e mA 1000 20000 4 MHz IE= 0; VCB= 10V; ftest= 1.0MHz 300 pF isc Websitewww.iscsemi.cn 2 |
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