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| HMC817LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Features Noise Figure: 0.5 dB Gain: 16 dB Output IP3: +37 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16 mm2 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC817LP4E is ideal for: * Cellular/3G and LTE/WiMAX/4G * BTS & Infrastructure * Repeaters and Femtocells * Multi-Channel Applications * Access Points Functional Diagram General Description The HMC817LP4E is a GaAs PHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 550 and 1200 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC817LP4E shares the same package and pinout with the HMC816LP4E and HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application. Electrical Specifi cations, TA = +25 C, Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2 Vdd = +3 V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 24 14 13 Typ. 698 - 960 16 0.003 0.5 28 12 16 17 31 34 44 24 12.5 0.8 11 Max. Min. Typ. 550 - 1200 15 0.003 0.5 22 14 16.5 17.5 30 34 44 65 18.5 1.1 13.5 Max. Min. Typ. 698 - 960 16 0.005 0.55 22 12 20.5 21 37 95 124 65 16.5 0.85 11.5 Max. Min. Typ. 550 - 1200 16 0.005 0.6 17 15 21 21.5 37 95 124 1.1 Max. MHz dB dB/ C dB dB dB dBm dBm dBm mA Vdd = +5 V Units * Rbias resistor sets current, see application circuit herein 8 - 370 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC817LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Broadband Gain & Return Loss 25 S21 Gain vs. Temperature [1] 22 20 8 +25C +85C - 40C 15 RESPONSE (dB) 5 -5 S22 Vdd= 5V Vdd= 3V 18 GAIN (dB) 16 14 12 S11 -15 -25 -35 0.2 0.4 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 1.8 2 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Gain vs. Temperature [2] 22 20 18 GAIN (dB) 16 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Input Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) +25C +85C - 40C +25 C +85 C - 40 C -10 -15 -20 -25 -30 -35 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Output Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 +25 C +85 C - 40 C Reverse Isolation vs. Temperature [1] 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 +25 C +85 C - 40 C [1] Vdd = 5V [2] Vdd = 3V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 371 LOW NOISE AMPLIFIERS - SMT HMC817LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz 8 LOW NOISE AMPLIFIERS - SMT Noise Figure vs. Temperature [1] 1.2 1 NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 -40C Vdd= 5V Vdd= 3V P1dB vs. Temperature 24 22 20 P1dB (dBm) Vdd=5V +85C 18 Vdd=3V +25 C 16 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 +25 C +85 C - 40 C Psat vs. Temperature 24 22 20 Psat (dBm) 18 16 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 +25 C +85 C -40 C Vdd=5V Output IP3 vs. Temperature 48 44 40 IP3 (dBm) Vdd=5V +25 C +85 C - 40 C Vdd=3V 36 32 28 24 20 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Vdd=3V Output IP3 and Supply Current vs. Supply Voltage @ 700 MHz 40 38 36 IP3 (dBm) 34 32 30 28 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 210 180 150 Output IP3 and Supply Current vs. Supply Voltage @ 900 MHz 40 38 36 IP3 (dBm) 34 32 30 28 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 210 180 150 120 90 60 30 0 5.5 Idd (mA) 120 90 60 30 0 5.5 Idd (mA) VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) [1] Measurement reference plane shown on evaluation PCB drawing. 8 - 372 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC817LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Power Compression @ 700 MHz [1] 50 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 900 MHz [1] 60 50 40 30 20 10 0 -10 Pout (dBm), GAIN (dB), PAE (%) 8 LOW NOISE AMPLIFIERS - SMT NOISE FIGURE (dB) 40 30 20 10 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) Pout Gain PAE Pout Gain PAE -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) Power Compression @ 700 MHz [2] 50 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 900 MHz [2] 60 Pout (dBm), GAIN (dB), PAE (%) 50 40 30 20 10 0 -10 Pout Gain PAE 40 30 20 10 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Pout Gain PAE -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz 24 1 Gain, Power & Noise Figure vs. Supply Voltage @ 900 MHz 24 1 GAIN (dB) & P1dB (dBm) 20 0.6 GAIN (dB) & P1dB (dBm) 22 Gain P1dB 0.8 NOISE FIGURE (dB) 22 Gain P1dB 0.8 20 0.6 18 0.4 18 Noise Figure 0.4 16 Noise Figure 0.2 16 0.2 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 373 HMC817LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz 8 LOW NOISE AMPLIFIERS - SMT Cross Channel Isolation [1] 0 Magnitude Balance [1] 1 AMPLITUDE BALANCE (dB) 1.2 1.3 -10 ISOLATION (dB) RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 0.5 -20 0 -30 -0.5 -40 0.5 0.6 0.7 0.8 0.9 1 1.1 -1 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) Phase Balance [1] 2 PHASE BALANCE (degrees) Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN) (Vdd = +5 Vdc) Channel Temperature +6V +10 dBm 150 C 1.08 W 60 C/W -65 to +150 C -40 to +85 C 1 0 Continuous Pdiss (T= 85 C) (derate 16.67 mW/C above 85 C) Thermal Resistance (channel to ground paddle) -1 Storage Temperature Operating Temperature -2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Typical Supply Current vs. Vdd (Rbias = 10k) Vdd (V) 2.7 3.0 3.3 4.5 5.0 5.5 Idd (mA) 24 34 44 82 95 105 Absolute Bias Register for Idd Range & Recommended Bias Resistor Rbias Vdd (V) Min 3V 10k Max Open circuit Open circuit Recommended 10k 820 5V 0 2k 10k 34 58 78 95 Idd (mA) Note: Amplifi er will operate over full voltage ranges shown above. With Vdd = 3V Rbias <10k is not recommended and may result in LNA becoming conditionally unstable. [1] Vdd = 5V [2] Vdd = 3V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 8 - 374 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC817LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Outline Drawing 8 LOW NOISE AMPLIFIERS - SMT Package Marking [1] H817 XXXX [2] NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC817LP4E Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn MSL Rating MSL1 [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 C Pin Descriptions Pin Number Function Description Interface Schematic 1, 6 RFIN1, RFIN2 These pins are matched to 50 Ohms. 2, 5, 7, 12, 14, 17, 19, 24 3, 4, 8 - 10, 21 - 23 GND These pins and package bottom must be connected to RF/DC Ground. No connection required. These pins may be connected to RF/DC ground without affecting performance. N/C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 375 HMC817LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions (Continued) Pin Number Function Description Interface Schematic 11, 20 Vdd1, Vdd2 Power supply voltages for each amplifier. Choke inductor and bypass capacitors are required. See application circuit. 13, 18 RFOUT1, RFOUT2 These pins are matched to 50 Ohms. 15, 16 RES1, RES2 These pins are used to set the DC current of each amplifier via external biasing resistor. See application circuit. Application Circuit 8 - 376 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC817LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Material for Evaluation PCB 123193 [1] Item J1 - J4 J5, J6 C5, C6 C9, C10 C11, C12 R1 - R4 R5, R6 (Rbias 1, 2) L1, L2 L5, L6 U1 PCB [2] Description PCB Mount SMA RF Connector 2mm Vertical Molex 8 pos Connector 1000 pF Capacitor, 0603 Pkg. 0.47 F Capacitor, 0603 Pkg.. 10 kpF Capacitor, 0402 Pkg. 0 Ohm Resistor, 0402 Pkg. 10K Resistor, 0402 Pkg. 15 nH Inductor, 0402 Pkg. 18 nH Inductor, 0603 Pkg. HMC817LP4E Amplifier 122725 Evaluation PCB The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 377 |
Price & Availability of HMC817LP4E
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