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| AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz-- 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. GSM Features Typical performance over entire GSM band: -- P1dB: 60 W typical. -- Continuous wave (CW) power gain: @ P1dB = 14.5 dB. -- CW efficiency @ P1dB = 53% typical. -- Return loss: -12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. AGR19060EU (unflanged) AGR19060EF (flanged) Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 60 W CW output power. Large signal impedance parameters available. Figure 1. Available Packages N-CDMA Features Typical 2 carrier N-CDMA performance: VDD = 28 V, IDQ = 700 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8--13). Peak/average (P/A) = 9.72 dB at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power ratio (ACPR) measured over 30 kHz BW at f1 - 885 kHz and f2 + 885 kHz. Third-order intermodulation distortion (IM3) measured over a 1.2288 MHz BW at f1 - 2.5 MHz and f2 + 2.5 MHz. -- Output power (POUT): 12 W. -- Power gain: 15.5 dB. -- Efficiency: 23.5%. -- IM3: -36 dBc. -- ACPR: -50.5 dBc. ESD Rating* AGR19060E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 EDGE Features Typical EDGE performance (1960 MHz, 26 V, IDQ = 500 mA): -- Output power (POUT): 25 W. -- Power gain: 15.3 dB. -- Efficiency: 37%. -- Modulation spectrum: @ 400 kHz = -61.0 dBc. @ 600 kHz = -74.0 dBc. -- Error vector magnitude (EVM) = 2.5%. * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19060EU AGR19060EF Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR19060EU AGR19060EF Derate Above 25 C: AGR19060EU AGR19060EF Operating Junction Temperature Storage Temperature Range Symbol VDSS VGS PD PD -- -- TJ TSTG Value 65 -0.5, 15 175 175 1.00 1.00 200 -65, 150 Unit Vdc Vdc W W W/C W/C C C Symbol Value 1.00 1.00 Unit C/W C/W RJC RJC * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 3. dc Characteristics Parameter Off Characteristics = 300A Drain-source Breakdown Voltage (VGS = 0 V, ID = 90 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.45 A) Gate Threshold Voltage (VDS = 10 V, ID = 180 A) Gate Quiescent Voltage (VDS = 28 V, ID = 500 mA) Drain-source On-voltage (VGS = 10 V, ID = 0.45 A) Symbol V(BR)DSS IGSS IDSS GFS VGS(th) VGS(Q) VDS(on) Min 65 -- -- -- -- -- -- Typ -- -- -- 4.0 -- 3.6 0.08 Max -- 1.8 100 5.5 -- 4.8 -- -- Unit Vdc Adc Adc S Vdc Vdc Vdc AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics (continued) Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. RF Characteristics Parameter Symbol Min Typ Max Unit Dynamic Characteristics CRSS -- 1.3 -- pF Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) (Part is internally matched both on input and output.) Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) GPS 14.5 15.5 -- dB Common-source Amplifier Power Gain (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency -- 23.5 -- % (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third-order Intermodulation Distortion IM3 -- -36 -- dBc (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration BW centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR -- -50.5 -- dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 1.2288 MHz integration BW centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) IRL -- -12 -- dB Input Return Loss (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Output Power at 1 dB Gain Compression P1dB 60 70 -- W (VDD = 28 V, POUT = 60 W CW, f = 1990 MHz, IDQ = 500 mA) Ruggedness No degradation in output (VDD = 28 V, POUT = 60 W CW, IDQ = 350 mA, f = 1930 MHz, power. VSWR = 10:1 [all phase angles]) AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Test Circuit Illustrations for AGR19060E R3 VGG R2 R1 FB1 + C13 C3 Z13 Z5 2 1 3 DUT Z14 Z6 C12 Z7 C6 C7 C8 C9 C18 + C10 VDD + C2 C1 C11 Z1 RF INPUT C5 Z2 C4 Z3 Z4 Z8 Z9 Z10 C17 Z11 C16 Z12 RF OUTPUT PINS: 1. DRAIN, 2. GATE, 3. SOURCE A. Schematic Gate Gnd Drain C2 R2 C12 R1 R3 C3 C6 C7 C8 C9 C18 C10 C11 FB1 C1 C13 C4 C5 S1 S2 C16 C17 B. Component Layout Parts List: Microstrip line: Z1 0.330 in. x 0.065 in.; Z2 0.470 in. x 0.065 in.; Z3 0.175 in. x 0.065 in.; Z4 0.260 in. x 0.270 in.; Z5 0.410 in. x 0.840 in.; Z6 0.260 in. x 0.970 in.; Z7 0.105 in. x 0.400 in.; Z8 0.330 in. x 0.560 in.; Z9 0.165 in. x 0.240 in.; Z10 0.315 in. x 0.065 in.; Z11 0.260 in. x 0.065 in.; Z12 0.255 in. x 0.065 in.; Z13 0.440 in. x 0.030 in.; Z14 0.695 in. x 0.050 in. ATC (R) B case chip capacitors: C3, C6: 8.2 pF, 100B8R2JCA500X; C4, C16: 10 pF, 100B100JCA500X; C7: 1000 pF, 100B102JCA500X. Kemet(R) B case chip capacitors: C9, C11: 0.10 F, CDR33BX104AKWS. Johanson Giga-Trim(R) variable capacitors: C5, C17: 0.4 pF--2.5 pF. Vitramon (R) 1206: C2, C8: 22000 pF. Murata (R) 0805: C13: 0.01 F, GRM40X7R103K100AL. Fair-Rite (R) ferrite bead: FB1, #2743019447. Sprague(R) tantalum, SMT, 35 V: C1, C10, C12: 22 F; C18: 10 F. Fixed film chip resistors, 0.25 W, 0.08 x 0.13: R1 510 ; R2 560 k; R3 4.7 . PCB etched circuit boards. Taconic(R) ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. Figure 2. AGR19060E Test Circuit Schematic AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics 0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 170 U CT 0.6 Z0 = 20 IN D 90 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 180 LOA D < 0.49 OW A RD HST N GT -170 EL E 0.1 -90 0.48 ) / Yo (-jB CE -160 -85 AN PT CE US ES WA 1. 0 0.2 V 7 0.4 < -80 6 0.4 4 0.0 0 -15 IV CT IN DU 0.3 -75 R ,O o) 5 0.0 .45 -70 06 0. -65 0.6 -60 1.6 0.7 1.4 0.8 1.2 5 0.9 -5 1.0 0 -5 5 -4 MHz (f) 1930 (f1) 1960 (f2) 1990 (f3) Note: ZS (Complex Source Impedance) 7.24 - j5.20 7.04 - j5.00 6.87 - j4.96 ZL (Complex Optimum Load Impedance) 3.23 - j1.07 3.06 - j0.99 2.97 - j1.00 ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion. GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances F 0. 32 0. 1.8 18 0 -5 -25 44 5 0. 0. 0.3 0.1 3 2. 0 7 -30 -60 0.3 0.1 4 6 - 35 -70 0.35 0.15 0.36 0.14 -80 -4 0 0.37 0.13 0.4 0.2 -90 0.12 0.38 0.11 -100 0.39 CA P AC I TI 0.1 0.4 -110 VE RE AC TA N 0.0 0.4 1 9 -12 CE CO M 0 0.0 PO N 0.4 8 2 EN T (-j -1 0. 40 0 4 Z X/ -10 ZS f1 0.6 0. 8 10 ZL 0.4 f3 20 f3 f1 0.2 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 5.0 -15 4.0 -20 3. 0 1. 0 0.8 0. -30 0.2 0.3 -4 0 8 0.6 0.4 10 0.1 -1 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES 20 L E OF ANG 0.2 0. 19 0. 31 50 -20 0.2 2 0.2 8 0.2 9 0.2 1 0. 07 30 0. 43 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 55 P1dB = 48.66 dBm (73.50 W) 50 3 dB GPS 18 17 16 15 14 P3dB = 49.41 dBm (87.24 W) GPS (dB)Z 13 40 POUT 35 12 11 10 9 30 8 7 25 15 20 25 30 35 40 6 45 POUT (dBm)Z PIN (dBm)Z Test Conditions: VDD = 28 Vdc, IDQ = 500 mA, CW, center frequency = 1960 MHz. Figure 4. CW POUT vs. PIN 50 45 40 35 30 25 20 15 10 5 0 1 10 POUT (W) Avg.Z GPS -20 -25 885 kHz 2.25 MHz 1 MHz -30 -35 -45 -50 -55 -60 -65 -70 100 ACPR (dBc) -40 Test Conditions: VDD = 28 Vdc, IDQ = 700 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz). GPS (dB), (%)Z Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. POUT AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 60 55 50 45 40 35 30 25 20 15 10 5 0 -10 IM3 (dBc), ACPR (dBc)Z 100 IM3 -20 -30 -40 -50 -60 -70 100 (%)Z ACP GPS (dB), GPS 1 10 POUT (W)Z Test Conditions: VDD = 28 Vdc, IDQ = 700 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz). Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. POUT 17 IDQ = 800 mA 16 GPS (dB)Z 15 14 13 12 IDQ = 300 mA IDQ = 400 mA IDQ = 500 mA IDQ = 700 mA IDQ = 600 mA 1 10 POUT (W) Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement. Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) -30 -35 -40 ACPR (dBc)Z -45 -50 -55 -60 -65 -70 1 10 POUT (W)Z Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement. IDQ = 300 mA IDQ = 400 mA IDQ = 500 mA IDQ = 700 mA IDQ = 600 mA 100 IDQ = 800 mA Figure 8. ACPR vs. POUT -15 -20 -25 IM3 (dBc) -30 -35 -40 -45 -50 -55 1 10 POUT (W) Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement. IDQ = 300 mA IDQ = 400 mA IDQ = 500 mA IDQ = 800 mA IDQ = 700 mA IDQ = 600 mA 100 Figure 9. IM3 vs. POUT AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 55 50 -30 -35 (%), EVM (%) Z 45 40 35 30 25 20 15 10 5 0 0 10 EVM 20 400 kHz 600 kHz GPS -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 30 POUT (W) Avg.Z 40 50 60 Test Conditions: VDD = 26 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE. Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT 55 50 -30 -40 -45 -50 600 kHz GPS -55 -60 -65 -70 -75 EVM 0 10 20 30 POUT (W) Avg.Z Test Conditions: VDD = 28 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE. (%), EVM (%) Z 45 40 35 30 25 20 15 10 5 0 400 kHz -80 40 50 60 -85 Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT SPECTRAL TREGROWTH (dBc)Z -35 GPS (dB), SPECTRAL REGROWTH (dBc) GPS (dB), AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR19060EU PINS: 1. DRAIN 2. GATE 3. SOURCE PEAK DEVICES AGR19060XU YYWWLL XXXXX ZZZZZZZ AGR19060EF PINS: 1. DRAIN 2. GATE 3. SOURCE PEAK DEVICES AGR19060XE YYWWLL XXXXX ZZZZZZZ Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok, Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. |
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