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APTGT75A170D1G Phase leg Trench + Field Stop IGBT Power Module Q1 4 5 Q2 6 7 3 VCES = 1700V IC = 75A @ Tc = 80C Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 1 Features * 2 * * * Benefits * * * * * * * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive High level of integration M5 power connectors Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1700 130 75 150 20 465 150A @ 1600V Unit V A V W December, 2009 1-4 APTGT75A170T1G - Rev 1 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT75A170D1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 75A Tj = 125C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.5 600 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=75A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 75A RG = 18 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 75A RG = 18 VGE = 15V Tj = 125C VBus = 900V IC = 75A Tj = 125C RG = 18 VGE 15V ; VBus = 1000V tp 10s ; Tj = 125C Min Typ 6800 277 220 0.85 280 80 850 120 300 100 1000 200 27 mJ 24.5 300 A Max Unit pF C ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Err Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1700 Typ Max 250 500 Unit V A A V ns C mJ December, 2009 2-4 APTGT75A170T1G - Rev 1 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 75A 75 1.8 1.9 410 520 19 31 9 17.5 2.2 IF = 75A VR = 900V di/dt =800A/s www.microsemi.com APTGT75A170D1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M5 M6 IGBT Diode 4000 -40 -40 -40 2 3 Min Typ Max 0.27 0.5 150 125 125 3.5 5 180 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz D1 Package outline (dimensions in mm) Typical Performance Curve Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 20 VCE=900V D=50% RG=18 TJ=125C TC=75C Forward Characteristic of diode 150 TJ=25C 15 ZCS ZVS 112.5 IF (A) 10 75 5 hard switching 37.5 TJ=125C 0 0 20 40 60 IC (A) 80 100 120 0 0 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Diode 0.05 0 0.00001 rectangular Pulse Duration (Seconds) www.microsemi.com 3-4 APTGT75A170T1G - Rev 1 December, 2009 APTGT75A170D1G Output Characteristics (VGE=15V) 150 125 IC (A) 100 75 50 25 0 0 0.5 1 1.5 2 VCE (V) Transfert Characteristics TJ=25C TJ=125C TJ=25C Output Characteristics 150 TJ = 125C 112.5 IC (A) VGE=13V VGE=15V VGE=20V 75 37.5 VGE=9V 2.5 3 3.5 4 0 0 1 2 3 VCE (V) 4 5 Energy losses vs Collector Current 80 60 TJ=125C VCE = 900V VGE = 15V RG = 18 TJ = 125C Eon 150 112.5 E (mJ) IC (A) Eoff 75 TJ=125C 40 20 0 37.5 Err 0 5 6 7 8 VGE (V) Switching Energy Losses vs Gate Resistance 100 VCE = 900V VGE =15V IC = 75A TJ = 125C 9 10 11 0 37.5 75 IC (A) 112.5 150 Reverse Bias Safe Operating Area 175 150 75 E (mJ) Eon 125 IC (A) 100 75 50 25 VGE=15V TJ=125C RG=18 50 Eoff 25 Err 0 0 20 0 0 400 800 1200 1600 2000 VCE (V) 40 60 80 100 120 140 Gate Resistance (ohms) 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTGT75A170T1G - Rev 1 rectangular Pulse Duration (Seconds) December, 2009 |
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