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Datasheet File OCR Text: |
MMBTA92W PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 300 300 5 100 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 10 V, -IC = 30 mA Collector Base Breakdown Voltage at -IC = 100 A Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 A Collector Base Cutoff Current at -VCB = 200 V Emitter Base Cutoff Current at -VEB = 3 V Collector Emitter Saturation Voltage at -IC = 20 mA, -IB = 2 mA Base Emitter Saturation Voltage at -IC = 20 mA, -IB = 2 mA Transition Frequency at -VCE = 20 V, -IC = 10 mA, f = 100 MHz Collector Output Capacitance at -VCB = 20 V, f = 1 MHz Symbol hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) -VBE(sat) fT Cob Min. 25 40 25 300 300 5 50 Max. 250 100 0.5 0.9 6 Unit V V V nA nA V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 10/11/2006 |
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