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| Photodiode Preliminary Wavelength Infrared Type Planar 6/21/2007 Technology InGaAs/InP EPD-1300-0-0.5 rev. 03/07 Case TO-18 Description InGaAs-Photodiode mounted in TO-18 standard package covered with epoxy. High spectral sensitivity in the infrared range (NIR, SWIR). O 5,40 0,1 Au-plating O 0,45 epoxy-lens Cathode O 4,2 0,2 2,54 0,2 45 Applications Optical communications, safety equipment, light barriers 1, 0 Anode 0,2 2,0 0,2 13,5 1,0 2,8 0,4 TO-18+epoxy Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient Operating temperature range Storage temperature range Test onditions Symbol A TC(ID) Tamb Tstg Value 0.196 0.074 -40 to +85 -40 to +100 Unit mm 1/K C C Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions IF = 10 mA Forward voltage Breakdown voltage 2) Symbol VF VR 0,5 S ID RSH NEP D* CJ Min Typ 0.8 Max Unit V V IR = 10 A VR = 0 V VR = 0 V VR = 0 V VR = 5 V VR = 10 mV = 1300 nm = 1300 nm VR = 0 V 5 800 680 0.9 250 0.5 1.0 1.1x10 45 -14 12 Sensitivity range at 10 % Spectral bandwidth at 50 % Responsivity at 1300 nm1) Dark current Shunt resistance Noise equivalent power Specific detectivity Junction capacitance 1) 2) 1750 nm nm A/W 1000 pA G W/ Hz cm Hz W -1 4.0x10 pF measured on bare chip on TO-18 header for information only EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode Preliminary 6/21/2007 EPD-1300-0-0.5 rev. 03/07 Typical Optical Responsivity (A/W ) 1,0 0,8 0,6 0,4 0,2 0,0 400 600 800 1000 1200 1400 1600 1800 W avelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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