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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTA114WKPT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=10k, Typ. ) SOT-23 .041 (1.05) .033 (0.85) (1) .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) (3) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) Gnd In 1 CIRCUIT 2 .045 (1.15) .033 (0.85) R2 TR R1 .019 (0.50) 3 Out Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Supply voltage Input voltage CONDITIONS - MIN. MAX. -50 +10 -100 V V UNIT -30 - - Tamb 25 OC, Note 1 - -55 - junction - soldering point - mA -100 200 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O RATING CHARACTERISTIC ( CHDTA114WKPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-50V IO=-2mA; VO=-0.3V IO=-10mA; II=-0.5mA VI=-5V VI=0V; VCC=-50V IO=-10mA; VO=-5.0V - - - - 24 7 0.37 - MIN. -0.8 - - - 0.1 - - - 10 0.47 250 TYP. - -3.0 - 0.3 -0.88 -0.5 - 13 0.57 - K MHz MAX. V V V mA uA UNIT Note 1.Pulse test: tp300uS; 0.02. |
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