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| APTGF90DA60CT1G Boost chopper NPT IGBT SiC Chopper diode Application 5 6 11 VCES = 600V IC = 90A @ Tc = 80C * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features 3 4 Q2 CR2 9 10 1 2 12 NTC * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Low leakage current - RBSOA and SCSOA rated Chopper SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration * * * * Benefits * * * * * * Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 600 110 90 315 20 416 200A @ 600V Unit V September, 2009 1-5 APTGF90DA60CT1G - Rev 0 Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF90DA60CT1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ 2 2.2 5.5 Max 250 2.5 6.5 400 Unit A V V nA 4.5 Dynamic Characteristics Symbol Characteristic Cies Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE= 15V ; VCE=300V IC=100A Inductive Switching (25C) VGE = 15V VBus = 300V IC = 100A RG = 2.2 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 100A RG = 2.2 VGE = 15V Tj = 125C VBus = 300V IC = 100A Tj = 125C RG = 2.2 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 4.3 0.4 240 25 10 130 20 25 11 150 30 0.6 mJ 3 450 A Max Unit nF nC ns ns Chopper SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 40A Test Conditions VR=600V Tj = 25C Tj = 175C Tc = 100C Min 600 Typ 200 400 40 1.6 2 56 260 200 Max 800 4000 1.8 2.4 Unit V A A September, 2009 2-5 APTGF90DA60CT1G - Rev 0 Tj = 25C Tj = 175C IF = 40A, VR = 300V di/dt =1200A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V V nC pF www.microsemi.com APTGF90DA60CT1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT SiC chopper diode 4000 -40 -40 -40 2.5 Min Typ Max 0.3 0.8 150 125 100 4.7 80 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 T: Thermistor temperature Min Typ 50 5 3952 4 Max Unit k % K % SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF90DA60CT1G - Rev 0 September, 2009 APTGF90DA60CT1G Typical IGBT Performance Curve Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 250 200 150 100 50 0 0 25 50 75 IC (A) Output Characteristics (VGE=15V) Output Characteristics 200 175 150 IC (A) TJ=125C TJ = 125C VGE=15V VGE=12V ZCS VCE=300V D=50% R G=2.2 T J=1 25C T C=75C hard switching ZVS 100 125 150 200 160 IC (A) TJ=25C VGE=20V 120 80 40 0 0 0.5 1 1.5 2 VCE (V) 2.5 125 100 75 50 25 0 VGE=9V 3 3.5 0 1 2 3 VCE (V) 4 5 200 175 150 Transfert Characteristics 5 4 E (mJ) 3 2 Energy losses vs Collector Current VCE = 300V VGE = 15V RG = 2.2 TJ = 125C Eoff 125 IC (A) 100 75 50 25 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 3.5 3 2.5 E (mJ) 2 1.5 1 0.5 0 0 2 4 6 8 Gate Resistance (ohms) 10 VCE = 300V ; VGE =15V IC = 100A ; TJ = 125C Eon Eoff TJ=125C TJ=25C Eon 1 0 0 25 50 75 100 125 150 175 200 IC (A) 250 200 IC (A) 150 100 50 0 0 Reverse Safe Operating Area VGE=15V TJ=125C RG=2.2 100 200 300 VCE (V) 400 500 600 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 IGBT 0 0.00001 www.microsemi.com 4-5 APTGF90DA60CT1G - Rev 0 September, 2009 APTGF90DA60CT1G Typical SiC chopper diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.9 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25C Reverse Characteristics 800 IR Reverse Current (A) 700 600 500 400 300 200 100 0 200 300 400 500 600 700 800 TJ=25C TJ=125C TJ=75C TJ=175C 80 IF Forward Current (A) 60 40 20 0 0 0.5 TJ=75C TJ=175C TJ=125C 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage VR Reverse Voltage (V) 1600 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0 1 10 100 VR Reverse Voltage 1000 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF90DA60CT1G - Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein September, 2009 |
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