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APT50GF60JCU2
ISOTOP(R) Boost chopper NPT IGBT SiC chopper diode
K
VCES = 600V IC = 50A @ Tc = 90C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch
C
G
Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Low leakage current - RBSOA and SCSOA rated * Chopper SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
E
E G C
K
* * *
ISOTOP(R)
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 90C TC = 25C TC = 25C Tj = 125C Max ratings 600 70 50 230 20 277 100A @ 500V Unit V
APT50GF60JCU2 - Rev 0 September, 2009
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APT50GF60JCU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6 400 Unit A V V nA
1.7 4
2.0 2.2
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 VGE = 15V Tj = 125C VBus = 400V IC = 50A Tj = 125C RG = 2.7 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 2200 323 200 166 20 100 40 9 120 12 42 10 130 21 0.3 mJ 1 225 A Max Unit pF
nC
ns
ns
Chopper SiC diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=600V Tj = 25C Tj = 175C
Tc = 125C
Min 600
Typ 100 200 20 1.6 2 28 130 100
Max 400 2000 1.8 2.4
Unit V A A V nC pF
APT50GF60JCU2 - Rev 0 September, 2009
Tj = 25C Tj = 175C IF = 20A, VR = 300V di/dt =800A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
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APT50GF60JCU2
Thermal and package characteristics
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min IGBT SiC chopper Diode 2500 -55
Typ
Max 0.45 1.35 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
11.8 (.463) 12.2 (.480) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
29.2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Dimensions in Millimeters and (Inches)
Emitter
Gate
Typical IGBT Performance Curve
Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF)
240 200 160 120 80 40 0
Operating Frequency vs Collector Current
VCE = 400V D = 50% RG = 2.7 TJ = 125C TC= 75C
Cies
ZCS
1000
Coes Cres
hard switching
ZVS
100 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
0
20
40
60
80
100
120
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9 0.7
0 0.00001
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APT50GF60JCU2 - Rev 0 September, 2009
APT50GF60JCU2
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
100 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
75
TJ=25C TJ=125C
75
TJ=25C
50
50
TJ=125C
25
25
0 0 1 2 3 4
VCE, Collector to Emitter Voltage (V) Transfer Characteristics 150 125 100 75 50 25
TJ=25C
0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 50A TJ = 25C VCE=120V VCE=300V VCE=480V
4
18 VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle
Ic, Collector Current (A)
16 14 12 10 8 6 4 2 0 0
TJ=125C
0 0 1 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 2 10
25
50
75
100 125 150 175 200
Gate Charge (nC) DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A) 25 50 75 100 125
70 60 50 40 30 20 10 0 25 50 75 100 125 150
APT50GF60JCU2 - Rev 0 September, 2009
TC, Case Temperature (C)
1.10
1.00
0.90
0.80 TJ, Junction Temperature (C)
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APT50GF60JCU2
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 60
VGE = 15V
Turn-Off Delay Time vs Collector Current 175 150 125 100 75 50 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.7 VCE = 400V RG = 2.7 VGE=15V, TJ=125C
50
40
Tj = 125C VCE = 400V RG = 2.7
30
VGE=15V, TJ=25C
20 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 60 50
VCE = 400V RG = 2.7
60 50
tf, Fall Time (ns)
tr, Rise Time (ns)
40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
VGE=15V, TJ=125C
40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
TJ = 125C
TJ = 25C
Eon, Turn-On Energy Loss (mJ)
1.25 1 0.75 0.5 0.25 0 0
VCE = 400V RG = 2.7 TJ=125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
Turn-On Energy Loss vs Collector Current 1.5
2.5 2 1.5 1 0.5 0
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 2.7
TJ = 125C
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 1.5 Switching Energy Losses (mJ) IC, Collector Current (A) 1.25 1 0.75 0.5 0.25 0 0 5 10 15 20 Gate Resistance (Ohms) 25
VCE = 400V VGE = 15V TJ= 125C
Eon, 50A Eoff, 50A
ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 120 100
60 40 20 0 0 200 400 600 VCE, Collector to Emitter Voltage (V)
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APT50GF60JCU2 - Rev 0 September, 2009
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APT50GF60JCU2
Typical SiC chopper diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0.3 0.1 0.7 0.5 0.9
0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics 400 IR Reverse Current (A) 350 300 250 200 150 100 50 0 200 300 400 500 600 700 800
TJ=25C TJ=125C TJ=75C TJ=175C
40
IF Forward Current (A)
30 20 10 0 0 0.5
TJ=75C
TJ=175C TJ=125C
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
VR Reverse Voltage (V)
800 C, Capacitance (pF) 600 400 200 0
APT50GF60JCU2 - Rev 0 September, 2009
1
10 100 VR Reverse Voltage
1000
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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