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| 2SB108100MA 2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION O O 2SB108100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150C operation junction temperature; O O O O O Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; O Chip Size: 1080m X 1080m; Chip Thickness: 28020m; Product Name 2SB108100MAYY Specification For Axial leads package Chip Topography and Dimensions La: Chip Size: 1080m; Lb: Pad Size: 985m; ORDERING SPECIFICATIONS O ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 2 50 150 -40~150 Unit V A A C C ELECTRICAL CHARACTERISTICS (Tamb=25 ) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=1mA IF=2A VR=100V Min. 100 --Max. -0.85 1 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 La fabricated in silicon epitaxial planar technology; |
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