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| Shantou Huashan Electronic Devices Co.,Ltd. HCN2C60 Silicon Controlled Rectifier Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=1.5A) * Low On-State Voltage (1.2V(Typ.)@ ITM) General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum RatingsTa=25 unless otherwise specified T s t g ----Storage Temperature ------------------------------------------------------ -40~125 T j ----Operating Junction Temperature ---------------------------------------------- -40~125 VDRM ----Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V ITRMS----R.M.S On-State Current180 Conduction Angles------------------------------------------1.5A IT(AV) ----Average On-State Current (Half Sine Wave : TC = 45 C) ----------------------------------------1.0A ITSM ----Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ------------------------I t ----Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------------2 15A 2W 0.9A2s PGM ----Forward Peak Gate Power Dissipation (Ta=25) --------------------------------------------------- PG(AV) ----Forward Average Gate Power Dissipation (Ta=25,t=8.3ms) ---------------------------------0.1W IFGM ----Forward Peak Gate Current -------------------------------------------------------------------------------- 1A VRGM ----Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V Shantou Huashan Electronic Devices Co.,Ltd. HCN2C60 Electrical CharacteristicsTa=25 unless otherwise specified Symbol IDRM VTM IGT Repetitive Current Items Peak Off-State Min. Max. 10 200 1.2 1.7 200 500 0.8 1.2 0.2 5.0 10 50 160 200 Unit VAK=VDRM uA V uA Conditions Tc=25 Tc=125 ITM=3A,PEAK VAK =6V(DC), RL=100 ohm Peak On-State Voltage (1) Gate Trigger Current2 Tc=25 Tc= -40 VAK =7V(DC), RL=100 ohm VGT Gate Trigger Voltage (2) V Tc=25 Tc= -40 VAK =12V, RL=100 ohm VGD Non-Trigger Gate Voltage V mA IH Rth(j-c) Rth(j-a) dv/dt Holding Current Thermal Resistance Thermal Resistance Critical Rate of Rise Off-state Voltage 2.0 Tc=125 IT=100mA,Gate open, Tc=25 Tc= -40 Junction to Case Junction to Ambient VD=VDRM67% exponential Waveform Rjk=1Kohm Tj=125 /W /W V/s 1. Forward current applied for 1 ms maximum duration,duty cycle 1%. 2. RGK current is not included in measurement. Performance Curves FIGURE 1 - Gate Characteristics Max. Allowable Case Temperture (c) FIGURE 2 - Maximum CaseTemperture Gate Voltage (v) Gate Current (mA) Average On-State Current (mA) Shantou Huashan Electronic Devices Co.,Ltd. HCN2C60 FIGURE 4-Thermal Response FIGURE 3-Typical Forward Voltage(V) Transient Thermal Imperdance (c) On-State Voltage (V) FIGURE 5-Typical Gate Trigger Voltage VS Junction Temperature On-State Current(A) Time (sec) FIGURE 6-Typical Gate Trigger Current VS Junction Temperature Junction Temperature (C) FIGURE 7-Typical Holding Current Junction Temperature (C) FIGURE 8-Power Dissipation Holding Current (mA) Max. Average Power Junction Temperature (C) Dissipation (W) Average On-State Current (A) |
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