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| FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power PowerTrench(R) BGA MOSFET June 2007 FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power Trench(R) BGA MOSFET -20V, -6.5A, 28m Features Max rDS(on) = 28m at VGS = -4.5V, ID = -6.5A Max rDS(on) = 45m at VGS = -2.5V, ID = -5A Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 Ultra-thin package: less than 0.80 mm height when mounted to PCB Outstanding thermal transfer characteristics: significantly better than SO-8 Ultra-low Qg x rDS(on) figure-of-merit High power and current handling capability RoHS Compliant General Description Combining Fairchild's advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and rDS(on). This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low rDS(on). Applications Battery management Load Switch Battery protection S G Q1 D Q2 G Bottom Top S MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) Ratings -20 12 -6.5 -20 2.1 -55 to +150 Units V V A W C Thermal Characteristics RJC RJA RJA RJB Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ball (Note 1) (Note 1a) (Note 1b) (Note 1) 0.6 60 108 6.3 C/W Package Marking and Ordering Information Device Marking 2554P Device FDZ2554P Package BGA 2.5X4.0 Reel Size 7'' Tape Width 12 mm Quantity 3000 units (c)2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 1 www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Electrical Characteristics TJ= 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V -20 -13 -1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -6.5A rDS(on) Static Drain to Source On Resistance VGS = -2.5V, ID = -5A VGS = -4.5V, ID = -6.5A, TJ = 125C VDD = -5V, ID = -6.5A -0.6 -0.8 3 21 36 30 24 28 45 43 S m -1.5 V mV/C gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz VGS = 15mV, f = 1MHz 1430 319 164 9.2 1900 425 245 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = -4.5V , VDD =-10V ID = -6.5A VDD = -10V, ID =-1A, VGS = -4.5V, RGEN = 6 12 9 62 37 14 3 4 22 18 100 60 20 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr NOTES: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design. a. 60C/W when mounted on a 1 in2 pad of 2 oz copper. b. 108 C/W when mounted on a minimum pad of 2 oz copper. Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.75A (Note 2) -0.7 25 20 -1.75 -1.2 40 32 A V ns nC IF = -6.5A, di/dt = 100A/s 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. (c)2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 2 www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Typical Characteristics TJ = 25C unless otherwise noted 20 2.2 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = - 4.5V VGS = -4V VGS = - 3.5V VGS = -2.5V VGS = -2V VGS = -2V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 2.0 1.8 1.6 1.4 1.2 1.0 -ID,DRAIN CURRENT (A) 15 10 VGS = -2.5V VGS = -3.5V VGS = -4V 5 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = -4.5V 0 0.0 0.8 0 5 10 -ID, DRAIN CURRENT(A) 15 20 0.5 1.0 1.5 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 90 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -50 ID = -6.5A VGS = -4.5V rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) 80 70 60 50 40 30 20 10 1.5 ID = -3.2A PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX TJ = 125oC TJ = 25oC -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2.0 2.5 3.0 3.5 4.0 -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 Figure 3. Normalized On- Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 20 -ID, DRAIN CURRENT (A) PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 10 1 0.1 TJ = 25oC TJ= 125oC 15 VDD = -5V 10 TJ =125oC 0.01 1E-3 1E-4 0.0 TJ = -55oC 5 TJ = 25oC TJ = -55oC 0 0.5 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 3 www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = -6.5A 2000 Ciss 4 3 2 1 0 0 4 8 12 16 Qg, GATE CHARGE(nC) CAPACITANCE (pF) VDD = -5V 1000 Coss VDD = -10V VDD = -15V 100 f = 1MHz VGS = 0V Crss 30 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 1ms 3000 1000 VGS = -4.5V SINGLE PULSE o RJA = 108 C/W TA = 25 C o 10 10ms 100 1 SINGLE PULSE TJ = MAX RATE RJA = 108 C/W o 100ms 1s 10s DC 10 0.1 TA = 25oC THIS AREA IS LIMITED BY rDS(ON) 0.01 0.1 1 10 100 1 0.5 -3 10 10 -2 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -1 0 1 10 2 10 3 Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 4 www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Dimensional Outline and Pad Layout (c)2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 5 www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET tm TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourseSM Green FPSTM Green FPSTM e-SeriesTM GOTTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFEETTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) PDP-SPMTM Power220(R) Power247(R) POEWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I29 (c)2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 6 www.fairchildsemi.com |
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