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| RLS244 SILICON EPITAXIAL PLANAR DIODE High Voltage Switching General Purpose Rectification Applications Features * Glass sealed envelope. (MSD) * VRM = 250V guaranteed. * High reliability. Absolute Maximum Ratings (Ta = 25oC) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current(1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge Ptot Tj TS Limits 250 220 625 200 1000 300 175 -65 to +175 Unit V V mA mA mA mW O O C C Characteristics at Ta = 25oC Symbol Forward voltage at IF = 200mA Reverse current at VR = 220V Capacitance between terminals at f = 1MHz Reverse recovery time at IF = 20mA, IR = 20mA, RL = 50 Min. Typ. Max. Unit VF IR CT trr - - 1.5 10 3 75 V uA pF ns SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/08/2002 |
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