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DLD101
LINEAR MODE CURRENT SINK LED DRIVER
Features
* * * * Primarily Designed for Driving LED/s for Illumination, Signage and Backlighting Applications Ideally Suited for Linear Mode Constant Current Applications VBE Referenced Current Sink Circuit Includes: * N-Channel Enhancement Mode MOSFET (Q1) * Base Accessible Pre-Biased Transistor (Q2) High Voltage Capable (50V) Small Form Factor Surface Mount Package High Dissipation Capability Low Thermal Resistance Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
S2 8 Q1 B1 7 R1 B1' 6 R2 Q2 E1
Mechanical Data
* * * * * * * Case: DFN3030D-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish -- NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.0172 grams (approximate)
VCC Supply LED String RC
NEW PRODUCT
* * * * * * *
4 C
3
2 G
1 D VDS Q1
5
S2 8
B1 7
B1' 6
E1 5
Q2 R2 E 5 6 R1 7 8 B
S
Option 3: ILED Option 3 Option 2 Option 1 ILED VBE RS 1.1 VBE RS
Options 1 & 2:
1 D2
2 G2
3 NC
4 C1
1 D2
2 G2
3 NC
4 C1
RS
Option 2: Capacitor is across R2 for better noise performance.
Top View Internal Schematic
Top View Package Pin-Out Configuration
Typical Application Circuit for Linear Mode Current Sink LED Driver
Maximum Ratings: (Q1)
Drain Source Voltage Gate-Source Voltage Drain Current (Note 3)
@TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 70C Pulsed ID IDM IS Value 100 20 1.0 0.8 3.0 1.0 Unit V V A A A
Characteristic
Drain Current (Note 3) Body-Diode Continuous Current (Note 3)
Maximum Ratings: (Q2)
Supply Voltage Input Voltage Output Current (DC)
@TA = 25C unless otherwise specified Symbol VCC VIN IO Value 50 -5 to +30 100 Unit V V mA
Characteristic
Thermal Characteristics - Total Device
Characteristic Power Dissipation (Note 3) @TA = 25C Thermal Resistance Junction to Ambient Air (Note 3) @TA = 25C Thermal Resistance Junction to Case Air (Note 3) @TA = 25C Operating and Storage Temperature Range
Notes:
Symbol PD RJA RJC TJ, TSTG
Value 0.7 178 30 -55 to +150
Unit W C/W C/W C
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6).
DLD101
Document number: DS32007 Rev. 6 - 2
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DLD101 Electrical Characteristics: (Q1)
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Min 100 2.0 Typ 0.9 0.89 129 14 8 3.4 0.9 1 7.9 11.4 14.3 9.6 Max 1 100 4.1 0.85 0.99 1.1 Unit V A nA V S V pF pF pF Test Condition VGS = 0V, ID = 250A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 1.5A VGS = 6V, ID = 1A VDS = 15V, ID = 1A VGS = 0V, IS = 1.5A VDS = 50V, VGS = 0V f = 1.0MHz
NEW PRODUCT
Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
nC
VDS = 50V, VGS = 10V, ID = 1A
ns
VGS = 50V, VDS = 10V, ID = 1A, RG 6
Electrical Characteristics: (Q2)
Characteristic Input Voltage Output Voltage Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency
Notes:
@TA = 25C unless otherwise specified Symbol VI(off) VI(on) VO(on) IO(off) G1 R1 R2/R1 fT Min 0.4 80 3.2 8 Typ 0.05 4.7 10 260 Max 1.5 0.3 0.5 6.2 12 Unit V V V A k MHz Test Condition VCC = 5V, IO = 100A VCC = 0.3V, IO = 5mA IO/II = 5mA/0.25mA VCC = 50V, VI = 0V VO = 5V, IO = 10mA VCE = 10V, IE = 5mA, f = 100MHz
4. Short duration pulse test used to minimize self-heating effect.
DLD101
Document number: DS32007 Rev. 6 - 2
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(c) Diodes Incorporated
DLD101
Q1 Typical Performance Curves
9 8 ID, DRAIN CURRENT (A) 7 6 5 4 3
TA = 85C TA = 125C TA = 150C VDS = VGS
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
10
10
1
VGS = 6V
NEW PRODUCT
VGS = 10V
2 1 0 1.5
T A = 25C T A = -55C
0.1 0 0.4 0.8 1.2 ID, DRAIN CURRENT (A) Fig. 2 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6
2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 1 Typical Transfer Characteristic
4.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6
3.0
VGS = 10V
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.4 1.2 1.0 0.8
2.5
TA = 150C T A = 125C T A = 85C
2.0
VGS = 10V ID = 1.5A VGS = 6V ID = 1A
1.5
0.6
TA = 25C
1.0
0.4
T A = -55C
0.2 0 0 0.4 0.8 1.2 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Temperature 1.6
0.5
0 -50
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 4 On-Resistance Variation with Temperature
-25
1.5
4.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature
ID = 250A ID = 1mA
1.2 RDSON, DRAIN-SOURCE ON-RESISTANCE ()
0.9
VGS = 6V ID = 1A
0.6
VGS = 10V ID = 1.5A
0.3
0 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
DLD101
Document number: DS32007 Rev. 6 - 2
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February 2010
(c) Diodes Incorporated
DLD101
Q1 Typical Performance Curves - continued
1.6 1.4 IS, SOURCE CURRENT (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.6
1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 60
TA = 25C
1,000 IDSS, LEAKAGE CURRENT (nA)
TA = 150C
100
TA = 125C
NEW PRODUCT
10
TA = 85C
TA = -55C
TA = 25C
0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Source-Drain Diode Forward Voltage vs. Current
Fig. 8 Typical Leakage Current vs. Drain-Source Voltage
Q2 Typical Performance Curves
25
IB = 5mA
1,000
IC, COLLECTOR CURRENT (mA)
20
hFE, DC CURRENT GAIN
15
IB = 4mA
100
T A = 150C T A = 125C TA = 85C TA = 25C TA = -55C
10
IB = 3mA
10
5
IB = 2mA
0 0
IB = 1mA
1 50 1 10 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical DC Current Gain vs. Collector Current 0.1
1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 9 Typical Collector Current vs. Collector-Emitter Voltage
DLD101
Document number: DS32007 Rev. 6 - 2
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(c) Diodes Incorporated
DLD101
Q2 Typical Performance Curves - continued
0.7 0.6 0.5 0.4 0.3 0.2
TA = 125C T A = 150C IC/IB = 10
NEW PRODUCT
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.1
TA = 85C
0 1
TA = -55C
T A = 25C
10 100 200 IC, COLLECTOR CURRENT (mA) Fig. 11 Typical Collector-Emitter Saturation Voltage vs. Collector Current
Typical Application Circuit
VCC Supply LED String RC
The DLD101 has been designed primarily for solid state lighting applications, to be used as a current sink circuit solution for LEDs. It features a N-channel MOSFET capable of 1A drive current and a prebiased NPN transistor (which allows direct connection to the base, or via a series base resistor).
4 C Q2 R2 E 5
3
2 G
1 D VDS Q1
B
R1 6 7 8
S
Option 3: ILED Option 3 Option 2 Option 1 ILED VBE RS 1.1 VBE RS
Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. Note that the pre-biased transistor (Q2) has the option of bypassing the series base resistor by connecting directly to pin 7. The N-MOSFET (Q1) is configured as a VBE referenced current sink and is biased on by RC. The current passed through the LED string, MOSFET and source resistor, develops a voltage across RS that provides a bias to the NPN transistor. Consideration of the expected linear mode power dissipation must be factored into the design, with respect to the DLD101's thermal resistance. VDS = VCC - VF LED String - VRS PQ1 = VDS * ILED String PWM dimming functionality can be effected by either driving the NPN base via an additional resistor (thereby overriding the feedback from RS) or by pulling the gate of the MOSFET down by direct connection. The PWM control pulse stream can be provided by a micro-controller or simple 555 based circuitry.
Options 1 & 2:
RS
Option 2: Capacitor is across R2 for better noise performance.
Fig. 12 Typical Application Circuit for Linear Mode Current Sink LED Driver
DLD101
Document number: DS32007 Rev. 6 - 2
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February 2010
(c) Diodes Incorporated
DLD101
Ordering Information (Note 5)
Part Number DLD101-7
Notes:
Case DFN3030D-8
Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW PRODUCT
Marking Information
YYWW
DFN3030D-8
L101
L101 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 09 for 2009) WW = Week code 01 to 52
Package Outline Dimensions
A A3 SEATING PLANE A1 D b D3 E3 D1 E E1
D2
E2
Dim A A1 A3 b D D1 D2 D3
Min 0.570 0 0.290 2.950 2.175 0.980 0.105
DFN3030D-8 Max Typ Dim Min 0.630 0.600 e 0.050 0.020 E 2.950 0.150 E1 1.800 0.390 0.340 E2 0.290 3.075 3.000 E3 0.175 2.375 2.275 L 0.300 1.180 1.080 Z 0.305 0.205 All Dimensions in mm
Max 3.075 2.000 0.490 0.375 0.40 -
Typ 0.650 3.000 1.900 0.390 0.275 0.350 0.355
L Z e BOTTOM VIEW
Suggested Pad Layout
C X3 G X4 G3 Y2 Y3
X Y5
G6
Dimensions C G G1 G2 G3 G4 G5 G6 X X1
G1 Y Y1 G4
G2
G5
Y4
X5 X1 X2 X3
Value Value Dimensions (in mm) (in mm) 0.650 X2 0.220 0.150 X3 0.375 0.950 X4 1.080 0.270 X5 0.150 0.135 Y 2.600 1.350 Y1 1.900 0.925 Y2 0.150 1.350 Y3 0.390 0.440 Y4 0.815 0.210 Y5 0.550
DLD101
Document number: DS32007 Rev. 6 - 2
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February 2010
(c) Diodes Incorporated
DLD101
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NEW PRODUCT
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DLD101
Document number: DS32007 Rev. 6 - 2
7 of 7 www.diodes.com
February 2010
(c) Diodes Incorporated

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