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| QS043-402-204012/5 94 80 0 .2 5 12 11 2 12 11 12 3 7 6 2-O 5.5 4 4-fasten tab #110 t= 0.5 8 6 23 4 12 17 35 5 4 (C2E1) 1 (E2) 2 (C1) 3 7(G2) 6(E2) 1 5(E1) 4(G1) 3-M5 23 23 17 16 7 16 7 16 30 +1 .0 - 0 .5 LABEL Dimension:mm ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal (kgfcm) , . ise urn-on all urn-off ime ime ime ime = 600V, = 0V = 20V,= 0V = 50A,= 15V = 5V,= 50mA = 10V,= 0V,= 1MH = = = = 300V 6.0 20.0 15V . . . . 2,500 . . . . . . . . . . . . . ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime orward urrent eak orward oltage everse ecovery ime . . . . . . . = 50A,= 0V = 50A,= -10V i/t= 100A/s hermal mpedance iode th(j-c) Junction to Case Tc . . . . 1. 00 QS043-402-204013/5 Fig.1- Output Characteristics (Typical) 100 Fig.2- Output Characteristics (Typical) TC=25C 100 TC=125C VGE=20V 12V VGE=20V 90 80 12V 11V 90 80 15V 15V 11V Collector Current I C (A) 70 60 50 40 30 20 10 0 0 1 2 3 4 Collector Current I C (A) 70 60 50 40 30 20 10V 10V 9V 9V 8V 8V 10 5 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25C 16 14 12 10 8 6 4 2 0 TC=125C IC=25A 50A 100A IC=25A 50A 100A Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 12 10 3000 10000 RL=6.0 TC=25C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ TC=25C Cies Gate to Emitter Voltage VGE (V) 300 250 200 150 100 50 0 Capacitance C (pF) 1000 Coes VCE=300V 200V 100V 8 6 4 2 0 200 300 Cres 100 0 50 100 150 30 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 QS043-402-204014/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 5 0.8 Switching Time t (s) Switching Time t (s) tOFF VCC=300V RG=20 VGE=15V TC=25C Resistive Load 2 1 0.5 VCC=300V IC=50A VGE=15V TC=25C Resistive Load 0.6 tf 0.4 toff 0.2 0.1 0.05 ton tr(V CE) tf 0.2 tON tr(VCE) 0 0 20 40 60 80 0.02 10 30 100 300 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 10 Fig.10- Series Gate Impedance vs. Switching Time VCC=300V IC=50A VGE=15V TC=125C Inductive Load 1 Switching Time t (s) Switching Time t (s) tOFF tON tf tr(Ic) VCC=300V RG=20 VGE=15V TC=125C Inductive Load 5 2 1 0.5 0.1 toff ton tf tr(IC ) 0.2 0.1 0.05 0.01 0.001 0 20 40 60 80 0.02 10 30 100 300 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 4 100 Fig.12- Series Gate Impedance vs. Switching Loss VCC=300V IC=50A VGE=15V TC=125C Inductive Load Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 3 VCC=300V RG=20 VGE=15V TC=125C Inductive Load EOFF 30 EON 10 2 EON ERR 3 EOFF 1 1 ERR 0 0 10 20 30 40 50 60 70 80 0.3 10 30 100 300 Collector Current IC (A) Series Gate Impedance RG ( ) 00 QS043-402-204015/5 100 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) TC=25C TC=125C Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 80 trr 200 100 50 IF=50A TC=25C TC=125C Forward Current I F (A) 60 40 20 10 5 IRrM 20 0 0 1 2 3 4 2 0 50 100 150 200 250 300 Forward Voltage VF (V) -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 200 100 50 RG=20 , VGE=15V, TC<125C Collector Current I C (A) 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1x10 1 Transient Thermal Impedance Rth (J-C) (C/W) 3 FRD 1 IGBT 3x10 -1 1x10 -1 3x10 -2 1x10 -2 TC=25C 1 Shot Pulse 3x10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 00 |
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