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| MBR30H35PT thru MBR30H60PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES * Guardring for overvoltage protection * Lower power losses, high efficiency * Low forward voltage drop * Low leakage current * High forward surge capability * High frequency operation * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. 30 A 35 V to 60 V 200 A 0.58 V, 0.63 V 150 A 175 C 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (Fig. 1) Non-repetitive avalanche energy per diode at 25 C, IAS = 4 A, L = 10 mH Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current per diode (1) Peak non-repetitive reverse energy (8/20 s waveform) Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 k Voltage rate of change at rated VR Operating junction temperature range Storage temperature range Note: (1) 2.0 s pulse width, f = 1.0 kHz Document Number: 88792 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT VRRM VRWM VDC IF(AV) EAS IFSM IRRM ERSM VC dV/dt TJ TSTG 2.0 30 25 10 000 - 65 to + 175 - 65 to + 175 35 35 35 45 45 45 30 80 200 1.0 20 50 50 50 60 60 60 V V V A mJ A A mJ kV V/s C C MBR30H35PT thru MBR30H60PT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MBR30H35PT MBR30H45PT TYP. Maximum instantaneous forward voltage per diode (1) Maximum reverse current at rated VR per diode (2) Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms IF = 20 A IF = 20 A IF = 30 A IF = 30 A TJ = 25 C TJ = 125 C TJ = 25 C TJ =125 C TJ = 25 C TJ = 125 C 0.54 0.62 6.0 MAX. 0.66 0.58 0.73 0.66 150 25 MBR30H50PT MBR30H60PT TYP. 0.60 0.66 4.0 MAX. 0.74 0.63 0.83 0.70 150 25 UNIT VF V IR A mA THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Thermal resistance, junction to case per diode SYMBOL RJC MBR30H35PT MBR30H45PT 1.4 MBR30H50PT MBR30H60PT UNIT C/W ORDERING INFORMATION (Example) PACKAGE TO-247AD PREFERRED P/N MBR30H45PT-E3/45 UNIT WEIGHT (g) 6.13 PACKAGE CODE 45 BASE QUANTITY 30/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise specified) 40 250 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 200 30 Peak Forward Surge Current (A) 50 75 100 125 150 175 Average Forward Current (A) 150 20 100 10 50 0 0 25 0 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88792 Revision: 19-May-08 MBR30H35PT thru MBR30H60PT Vishay General Semiconductor 100 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 TJ = 150 C TJ = 25 C 1 TJ = 125 C 0.1 MBR30H35PT - MBR30H45PT MBR30H50PT - MBR30H60PT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Junction Capacitance (pF) 1000 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 TJ = 150 C 10 10 1 TJ = 125 C 0.1 MBR30H35PT - MBR30H45PT MBR30H50PT - MBR30H60PT Transient Thermal Impedance (C/W) 100 Instantaneous Reverse Leakage Current (mA) 1 0.01 0.001 TJ = 25 C 0.0001 0 20 40 60 80 0.1 0.01 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10 TYP. Both Sides 0.078 (1.98) REF. 10 1 2 3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.118 (3.0) 0.108 (2.7) 1 REF. Both Sides 0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6) 0.117 (2.97) 0.225 (5.7) 0.205 (5.2) PIN 1 PIN 3 0.048 (1.22) 0.044 (1.12) 0.030 (0.76) 0.020 (0.51) PIN 2 CASE Document Number: 88792 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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