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APTGL30X120T3G
3 Phase bridge Trench + Field Stop IGBT4 Power Module
15 16 19 20 18 23 25 29 14 30 22 28 R1 31
VCES = 1200V IC = 30A @ Tc = 80C
Application * Motor control Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Low tail current - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS compliant
11 10 12
8 7
4 3 2 13
It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together.
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Max ratings 1200 45 30 50 20 170 50A @ 1100V Unit V A
March, 2009 1-5 APTGL30X120T3G - Rev 0
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGL30X120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 25A Tj = 150C VGE = VCE , IC = 0.8mA VGE = 20V, VCE = 0V Min Typ 1.85 2.25 5.8 Max 250 2.25 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=25A Inductive Switching (25C) VGE = 15V VCE = 600V IC = 25A RG = 20 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 25A RG = 20 TJ = 25C VGE = 15V VCE = 600V TJ = 150C IC = 25A TJ = 25C RG = 20 TJ = 150C VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 1430 115 85 0.2 130 20 300 45 150 35 350 80 2 3 1.5 2.2 100 ns Max Unit pF C
ns
mJ mJ A
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 150C Tc = 80C IF = 25A IF = 50A IF = 25A IF = 25A VR = 667V
Min 1200
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
di/dt =200A/s
nC
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APTGL30X120T3G - Rev 0
360 480 1800
ns
March, 2009
25 2.6 3.2 1.8 320
3.1 V
APTGL30X120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 exp B25 / 85 T - T 25
T: Thermistor temperature 1 RT: Thermistor value at T
Min
Typ 50 5 3952 4
Max
Unit k % K %
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.9 1.4 175 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-5
APTGL30X120T3G - Rev 0
March, 2009
17
28
APTGL30X120T3G
Typical Performance Curve
50 40 IC (A) 30 20 10 0 0 1 2 VCE (V) 3 4 Output Characteristics (VGE=15V) Output Characteristics 50 TJ = 150C
TJ=25C TJ=150C
40 30 IC (A) 20 10 0 0 1
VGE=19V VGE=15V
VGE=9V
2 VCE (V)
3
4
50 40
Transfert Characteristics
TJ=25C
10 8 E (mJ) 6 4
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 20 TJ = 150C
Eon
IC (A)
30 20 10 0 5 6 7 8 9 VGE (V) Switching Energy Losses vs Gate Resistance 6 5 4
VCE = 600V VGE =15V IC = 25A TJ = 150C TJ=150C
Eoff
2 0 10 11 12 13 0 10 20 30 IC (A) Reverse Bias Safe Operating Area 60 50
Eon
40
50
E (mJ)
40 IC (A)
Eoff
3 2 1 0 0
30 20 10 0
VGE=15V TJ=150C RG=20
20 40 60 Gate Resistance (ohms)
80
0
300
600 900 VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6
0.5 0.9 0.7
IGBT
0.4 0.2
0.3 0.1 0.05
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGL30X120T3G - Rev 0
March, 2009
APTGL30X120T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80
VCE=600V D=50% RG=20 TJ=150C Tc=75C
Forward Characteristic of diode
60 50 40 IF (A) 30 20
TJ=25C TJ=125C
60
40
20
Hard switching
10 0
0 0 10 20 IC (A) 30 40 50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.00001
0.1 0.05 0.9 0.7 0.5 0.3 Single Pulse
Diode
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGL30X120T3G - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
March, 2009

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