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MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
Outline Drawing
DESCRIPTION
MGFS39E3336 is a 4-stage GaAs RF amplifier Designed for WiMAX CPE.
1 2 3 4 5 6 7 8 9 10
6.0
40 39 38 37 36 35 34 3 33 32 1 31
0.9
30 29 28 27 26 25 24 23 22 21
FEATURES
* * * * * * * * InGaP HBT Device 6V Operation 30dBm Linear Output Power (64QAM, EVM=2.5%) 40dB Linear Gain Integrated Output Power Detector Integrated 1-bit 20dB Step Attenuator Surface Mount Package RoHS Compliant Package
6.0
39E3336 (Lot. No) JAPAN
40 39 38 37 36 35 34 33 32 31 11 12 13 14 15 16 17 18 19 20
1 2 3 4 5 6 7 8 9 10
11 12 13 14 15 16 17 18 19 20
30 29 28 27 26 25 24 23 22 21
DIM in mm
APPLICATION
IEEE802.16-2004
Top view
FUNCTIONAL BLOCK DIAGRAM
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/14)
Rev.5.2 Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
Conditions Value 8 3 3.5 80 300 300 2000 -3 160 Pout<=30dBm Duty<=50% -40 to +85 -40 to +125 Unit V V V mA mA mA mA dBm deg. C deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Vc1,Vc2,Vc3,Vc4 Vcb1-3,Vcb4 Vref Vcont Ic1 Ic2 Ic3 Ic4 Pin Tj Tc(op) Tstg NOTE : Each maximum rating is guaranteed independently. Please take care that MGFS39E3336 is operated under these conditions at the worst case on your terminal. . Input Power Junction Temperature Operation Temperature Storage Temperature Operation current Parameter Supply Voltage Reference Voltage ATT Control Voltage
ELECTRICAL CHARACTERISTICS(Ta=25C)
Symbol Parameter Test Conditions Min 3.3 Limits Typ 43 1.2 2.5 10 1.7 26 Unit Max 3.6 GHz dB A % dB V dB
f Frequency Gp Gain Vcc=6V, Vref=2.85V Ict Total Collector Current Pout=30dBm EVM EVM 64QAM OFDM Modulation RLin Input Return Loss Duty Cycle <= 50% Vdet Power Detector Voltage ATT Control Gain Step NOTE : Zin=50 Ohm, Zout : Measured with application circuit
ESD RATING
: Class 2 (HBM) : Level 3
MOISTURE SENSITIVITY LEVEL THERMAL RESISTANCE :
4 deg.C/W
(The thermal resistance of the 4th stage is calculated as 5.5 deg.C/W )
MITSUBISHI ELECTRIC CORP.
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Rev.5.2 Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
EVM vs. Output Power
10 9
3.3GHz 3.4GHz 3.5GHz 3.6GHz
PERFORMANCE DATA
WiMAX OFDM 64QAM BW=10MHz signal input. Vcc=6V, Vref=2.85V, Vcont=0V, Duty 50%, Ta=25deg.C
Power Gain vs. Output Power
50
45
8 7
Gp (dB)
40
3.3GHz 3.4GHz 3.5GHz 3.6GHz
EVM(%) 15 20 25 Output Power (dBm) 30 35
6 5 4 3 2 1
35
30
0 15 20 25 Output Power (dBm) 30 35
Collector Current vs. Output Power
2000
3.3GHz 3.4GHz 3.5GHz 3.6GHz
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 1.5 1.0 0.5
3.3GHz 3.4GHz 3.5GHz 3.6GHz
1500 Ict (mA) 1000
500 15 20 25 Output Power (dBm) 30 35
0.0 15 20 25 Output Power (dBm) 30 35
Attenuator Performance
50 40 30 S21 (dB) 20 10 0 -10 3.0 3.2 3.4 3.6 3.8 4.0 Frequency (GHz)
Vcont=0V Vcont=3V
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MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
Spectrum Emission Mask
WiMAX OFDM 64QAM BW=10MHz signal input. Vcc=6V, Vref=2.85V, Vcont=0V, Duty=50%, Ta=25deg.C
Po=30dBm, ETSI Mask: EqC-EMO=6 (Type G)
* RBW 30 kHz * VBW 300 Hz
* RBW 30 kHz * VBW 300 Hz
Ref
0
0 dBm
* Att
0 dB
* SWT 9.2 s
Ref
0
0 dBm
* Att
0 dB
* SWT 9.2 s
-10 1 RM * CLRWR
3.3GHz
A SGL TRG
-10 1 RM * CLRWR
3.4GHz
A SGL TRG
-20
-20
-30
-30
-40
-40
-50
EXT 3DB
-50
EXT 3DB
-60
-60
-70
-70
10
-80
10
-80
-90
-90
-100
-100
Center
3.3 GHz
5 MHz/
Span
50 MHz
Center
3.4 GHz
5 MHz/
Span
50 MHz
Date: 19.DEC.2008
15:58:15
Date: 19.DEC.2008
15:57:11
* RBW 30 kHz * VBW 300 Hz
* RBW 30 kHz * VBW 300 Hz
Ref
0
0 dBm
* Att
0 dB
* SWT 9.2 s
Ref
0
0 dBm
* Att
0 dB
* SWT 9.2 s
-10 1 RM * CLRWR
3.5GHz
A SGL TRG
1 RM * CLRWR
-10
A SGL
-20
-20
3.6GHz
TRG
-30
-30
-40
-40
-50
EXT 3DB
-50
EXT 3DB
-60
-60
-70
-70
10
-80
10
-80
-90
-90
-100
-100
Center
3.5 GHz
5 MHz/
Span
50 MHz
Center
3.6 GHz
5 MHz/
Span
50 MHz
SEM vs. Output Power Date: 19.DEC.2008 15:55:53
-10
Date: 19.DEC.2008
15:54:20
-20
Spectrum Emission Mask (dBc)
Spectrum Emission Mask (dBc)
-15 -20 -25 -30 -35 -40 -45 -50 15
f=3.3GHz f=3.4GHz f=3.5GHz f=3.6GHz
-25 -30 -35 -40 -45 -50
5M Hz offse t
f=3.3GHz f=3.4GHz f=3.5GHz f=3.6GHz
10.57M Hz offs e t
7.14M Hz offse t
20M Hz offs e t
-55 -60 15 20 25 30 35
20
25
30
35
Output Power (dBm)
Output Pow er (dBm)
MITSUBISHI ELECTRIC CORP.
(4/14)
Rev.5.2 Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
Temperature Dependence
WiMAX OFDM 64QAM BW=10MHz signal input. Vcc=6V, Vref=2.85V, Vcont=0V, Duty 50%, f=3.5GHz
Power Gain vs. Output Power
50 f=3.3GHz 50 f=3.4GHz
45 Gp (dB)
45
Gp (dB)
40 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
40 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
35
35
30 15 20 25 Output Power (dBm) f=3.5GHz 30 35
30 15 20 25 Output Power (dBm) f=3.6GHz 30 35
50
50
45
45
Gp (dB)
40 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
Gp (dB)
40 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C 15 20 25 Output Power (dBm) 30 35
35
35
30 15 20 25 Output Power (dBm) 30 35
30
EVM vs. Output Power
10 9 8 7 EVM(%) 6 5 4 3 2 1 0 15 20 25 Output Power (dBm) 30 35 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C EVM(%) f=3.3GHz 10 9 8 7 6 5 4 3 2 1 0 15 20 25 Output Power (dBm) 30 35 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C f=3.4GHz
MITSUBISHI ELECTRIC CORP.
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Rev.5.2 Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
10 9 8 7 EVM(%) 6 5 4 3 2 1 0 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C f=3.6GHz
10 9 8 7 EVM(%) 6 5 4 3 2 1 0 15 20 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.5GHz
25 Output Power (dBm)
30
35
15
20
25 Output Power (dBm)
30
35
Collector Current vs. Output Power
f=3.3GHz 2000 1800 1600 1400 Ict (mA) 1200 1000 800 600 400 15 20 25 Output Power (dBm) 30 35 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
Ict (mA) f=3.4GHz -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
2000 1800 1600 1400 1200 1000 800 600 400 15 20
25 Output Power (dBm)
30
35
2000 1800 1600 1400 Ict (mA) 1200 1000 800 600 400 15 20 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.5GHz
2000 1800 1600 1400 Ict (mA) 1200 1000 800 600 400
f=3.6GHz -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
25 Output Power (dBm)
30
35
15
20
25 Output Power (dBm)
30
35
MITSUBISHI ELECTRIC CORP.
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Rev.5.2 Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.3GHz
3.0 2.5 2.0 Vdet (V) 1.5 1.0 0.5 0.0 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.4GHz
1.5 1.0 0.5 0.0 15 20 25 Output Power (dBm) 30 35
15
20
25 Output Power (dBm)
30
35
3.0 2.5 2.0 Vdet (V) -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.5GHz
3.0 2.5 2.0 Vdet (V) 1.5 1.0 0.5 0.0 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.6GHz
1.5 1.0 0.5 0.0 15 20 25 30 35
15
20
25 Output Power (dBm)
30
35
SEM vs. Output Power Output Power (dBm)
-10 Spectrum Emission Mask (dBc) -15 -20 -25 -30 -35 7.14MHz offset -40 -45 -50 15 20 25 Output Power (dBm) 30 35 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C f=3.3GHz
-10 Spectrum Emission Mask (dBc) -15 -20 -25 -30 -35
f=3.4GHz -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
5MHz offset
5MHz offset
7.14MHz offset -40 -45 -50 15 20 25 Output Power (dBm) 30 35
MITSUBISHI ELECTRIC CORP.
(7/14)
Rev.5.2 Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
-10 Spectrum Emission Mask (dBc) -15 -20 -25 -30 -35 -40 -45 -50 15 20 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.5GHz
-10 Spectrum Emission Mask (dBc) -15 -20 -25 -30 -35 -40 -45 -50 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.6GHz
5MHz offset
5MHz offset
7.14MHz offset
7.14MHz offset
25 Output Power (dBm)
30
35
15
20
25 Output Power (dBm)
30
35
-30 Spectrum Emission Mask (dBc) -35 -40 -45 -50 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.3GHz
-30 Spectrum Emission Mask (dBc) -35 -40 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.4GHz
10.57MHz offset
10.57MHz offset -45 -50 20MHz offset -55 -60
20MHz offset -55 -60 15 20 25 Output Power (dBm) 30 35
15
20
25 Output Power (dBm)
30
35
-30 Spectrum Emission Mask (dBc) -35 -40 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.5GHz
-30 Spectrum Emission Mask (dBc) -35 -40 -45 -50 -40deg.C 0deg.C +25deg.C +60deg.C +85deg.C
f=3.6GHz
10.57MHz offset
10.57MHz offset -45 -50 20MHz offset -55 -60 15 20 25 Output Power (dBm) 30 35
20MHz offset -55 -60 15 20 25 Output Power (dBm) 30 35
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MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
Pinout Description
40
36
38
37
35
34
39
NC NC NC NC RF IN RF IN NC NC Vc1 NC
33
32
31
NC NC NC Vcont NC Vref NC Vdet NC NC
1 2 3 4 5 6 7 8 9 10 30 29 28 27 26
GND
25 24 23 22 21
GND RF OUT RF OUT RF OUT RF OUT RF OUT RF OUT RF OUT RF OUT GND
NC 11 NC 12 NC 13 Vcb1-3 14 Vc2 15 Vc3 16 Vcb4 17 NC 18 NC 19 NC 20
(X-ray Top View)
Pin 1, 2, 3, 4, 7, 8, 10, 11, 12, 13, 18, 19, 20, 31, 32, 34, 36, 38, 39, 40 5,6 9 14 15 16 17 21,30 22,23,24,25, 26,27,28,29 33 35
Function NC
Description No connect pins, not wired inside the package. It is recommended to connect them to ground.
RF IN Vc1 Vcb1-3 Vc2 Vc3 Vcb4 GND RF OUT Vdet Vref
RF input terminals, internally DC-grounded. Do not apply DC voltage to them Collector terminal of the 1st stage. DC supply terminal for the 1st, 2nd and 3rd stage bias circuits. Collector terminal of the 2nd stage. Collector terminal of the 3rd stage. DC supply terminal for the 4th stage base bias circuit. Ground pins, internally grounded inside the package. It is recommended to connect them to on-board ground to achieve stable operation. RF output pins and the collector terminals of the 4th stage. Output of power detector. A capacitor and a resistor are connected on board between this pin and ground for setting output voltage level appropriately. (See P.10 and 11) Reference voltage and power up/down control pin for all the stage. The bias circuit operates with a Vref of 2.85V. All bias currents can be shut down by turning off Vref. The Vref pin should be operated under the pulsed condition in order to achieve specified performance. The recommended pulse condition is shown in P. 12. Attenuator control pin. The ATT controller offers through mode with a Vcont of 0V, and offers attenuation mode with a Vcont of 3V. The backside ground paddle should be connected to the external ground plane which provides heat sinking.
37 GND
Vcont GND
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MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
EXAMPLE LAYOUT OF EVALUATION BOARD(40mmX 40mm, t=0.2mm(RF), Er=4.2, FR-4) Vref(2.85V)
Vcon(0/3V)
Vdet
RF IN
RF OUT
Vc(6V)
ITEM Q1 C1, C2, C10, C11, C12 C14 C13, C15 C3 C4, C5 C6 C7 C8 C9 C16, C17, C18, C19, C20 C21, C22 R1
DESCRIPTION MGFS39E3336 1 nF, 1005 Murata, GRM155B11H102KDA2 1 nF, 1005 Murata, GRM155B11H102KDA2 1 nF, 1005 Murata, GRM155B11H102KDA2 1.7 pF, 1005 Murata, GJM1554C1H1R7BB01 1.8 pF, 1005 Murata, GJM1554C1H1R8BB01 (Unused Number) 2.7 pF, 1005 Murata, GJM1553C1H2R7BB01 0.8 pF, 1005 Murata, GJM1554C1HR80BB01 1uF, 1608 Murata: GRM188B31E105KA75 4.7uF, 3216 Murata: GCM31CR71E475KA40 160kohms, 1005 Taiyosha, RPCO3T164J
NOTE 6mmX6mm, QFN Decoupling Capacitors. Decoupling Capacitors. Position is important. Capacitor for detector circuit. Defines response shape. Capacitors for output matching circuit, Position is important. Capacitor for output matching circuit. Position is important. Capacitor for output matching circuit. Position is important. Capacitor for output matching circuit. Position is important. Decoupling Capacitors. Decoupling Capacitors. Resistor for detector circuit. Defines output voltage
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MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
APPLICATION CIRCUIT IN EVALUATION BOARD
NOTE: A properly designed PC board is essential to any RF/microwave circuit. Be sure to use controlled impedance lines on all high-frequency inputs and outputs. A ground plane should be present on both the top and bottom of the PC board and plated-through via holes connecting the top and bottom ground planes should be distributed (See page 10). GND pins and ground paddle of the package should be connected to the bottom ground plane with plated-through via holes close to the package. To improve the heat resistance, place as plated-through via holes as possible under the ground paddle (See page. 13). The output matching circuit is not included in the device so that users can determine the optimum output performance on their boards at the frequencies of interest. Since the circuit dictates the RF characteristics of PA, especially distortion, it should be designed with great care to obtain its maximum ability. The schematic of the evaluation board is shown above. Capacitors, C4~C6, C8, C9 and C15, and controlled impedance lines are optimized to realize broad-band output matching at frequencies from 3.3 to 3.6GHz. Input and output matching networks are very sensitive to layout-related parasitics. Suggested component values may vary according to layout and PC board material. Since the high-impedance feed lines for Vc3 and Vc4 are not included in the device, both the lines have to be laid out on the PCB. In layout design, please refer to the reference circuit of the feed lines which affect the distortion. Each Vc node on the board should have its own decoupling capacitor to minimize supply coupling from one section of the MMIC to another. A bypass capacitor with low ESR at the RF frequency of operation is located close to the package to reject the RF noise. In addition, a large decoupling capacitor is located on each power supply line to reject low frequency noise.
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MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
RECOMMENDED PULSE CONDITION
Vc 6V 0V 2.85V 0V Pulse Width 2.5ms Delay Time 0ms on RF Signal Input off Pulse Width 2.5ms Pulse Priod 5ms time Pulse Priod 5ms
Vref
*Pulse Period : 5ms *Pulse Width : 2.5 ms *Delay time : 0 ms *Rise time of Vref pulse : 100ns *Set up time of quiescent current
after Vref turn on : 1 us
* * *
This figure shows the timing chart between Vref and input signal. Only while the reference voltage is 2.85V, the device transmits the input signal (*1). We usually set the delay time at 0ms in our EVB evaluation because of short set-up time. However set-up time often depends on bypass capacitors of PCB. Therefore, please give appropriate delay time (e.g. about the rise time of Vref) between the rise edge of Vref and that of the input signal . * We recommended the device operate with less than 50% duty cycle of a 5msec period in order to ensure specified reliability. *1: In case the device is operated under the Vref conditions of more than 50% duty cycle, self-heating will cause reliability problem, thereby degrading both power gain and EVM performance unexpectedly.
TEST SET-UP
Power Meter Attenuator Vector Signal Generator Coupler Vcont
Oscilloscope Vdet
Vector Signal Analyzer Attenuator Attenuator Coupler Power Meter
DUT
Vcc Vref
DC Power Supply
* * *
Pulse Power Supply
Oscilloscope
Calibrate power meters at input/output ports on the EVB. Apply DC voltage to Vcc (Vcb1-3, Vcb4, Vc1~Vc4) and Vcont, where pulsed power supply should be applied to Vref for pulsed operation. . Monitor DC output voltage from Vdet using an oscilloscope or a multimeter.
GND->Vcc->Vref->Vcont (1)Apply 6V to Vcc, where stepping up from 0 to 6V is preferable. (2)Supply pulsed voltage between 0 and 2.85V for Vref. Please check the voltage level of Vref close to EVB and the timing chart between Vref and input signal using an oscilloscope. Also please do not apply supply voltage exceeding 3V(absolute maximum rating) to the Vref terminal. (3)Supply Vcont with 3V for the attenuation mode. In the thru-mode, apply 0V to Vcont or keep it open. Vcont->Vref->Vcc->GND The reverse procedure is recommended for bias off.
MITSUBISHI ELECTRIC CORP.
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Rev.5.2 Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
3-R0.3 5.0 C0.4 INDEX
PACKAGE DRAWING DIMENSIONS
All Dimensions are in mm. General tolerance is 0.1mm.
6.0 0.9(max.) 0.2
P0.5 x 9 = 4.5
4.2 0.2 4.2 5.0
6.0
0.2 P0.5 x 9 = 4.5
Top View EXAMPLE METAL LAND PATTERN
Side View
Bottom View
Note: UNIT : um Through holes with 200um diameter should be put with a distance of 500um among them. It is recommended that they have metallization of 25um thick on the inside wall.
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MITSUBISHI SEMICONDUCTOR
MGFS39E3336-01
Specifications are subject to change without notice.
3.3-3.6GHz HBT Integrated Circuit
HANDLING PRECAUTION
1)
Work desk, test equipment, soldering iron and worker should be grounded before mounting and testing. Please note that electric discharge of GaAs HBT is much more sensitive than that of Si transistor. Handling without ground possibly damages GaAs HBT. The surface of a board on which this product is mounted should be as flat and clean as possible to prevent a substrate from cracking by bending this product.
2)
3)
Recommended IR reflow soldering condition is shown as follows. (Max. two times)
Peak 245deg.C
240deg.C 225deg.C (PKG Surface temp.)
10 sec 70 sec
Max. Ramp Up Rate 3deg./sec.
180 10 deg .C 120 20sec Max. Ramp Down Rate
4)
6deg./sec.
Handling precaution at high temperature In case of heating this product, please keep the same heat profile as recommended reflow one. Please note that crack, flaw or modification may be generated if epoxy resin part is handled with tweezers and etc. at high temperature.
5)
Cleaning condition Please select after confirming administrative guidance, legal restrictions, and the mass of the residual ion contaminant etc., and use it. After soldering, please remove the flux. Please take care that solvent does not penetrate into this product. GaAs HBT contains As(Arsenic). This product should be dumped as particular industrial waste.
6)
7)
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