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| 30 25 20 7V 10V 6V 5V 4.5V Vgs=4V 10 8 6 4 2 Vds=5V Id (A) 15 10 5 0 0 1 2 3 Id(A) 125C 25C 3.5V 0 4 5 2 2.5 3 3.5 4 4.5 5 Vds (Volts) Fig 1: On-Region Characteristics Vgs(Volts) Figure 2: Transfer Characteristics 2.2 220 Normalized On-Resistance 200 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Vgs=4.5V Id=2A Vgs=10V Id=3.1A Rds(on) (m:) 180 160 140 120 100 80 0 6 8 10 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 2 4 Vgs=10V Vgs=4.5V 240 220 200 Id=3.1A 1.0E+01 1.0E+00 1.0E-01 Is (A) Rds(on) (m:) 180 160 140 120 100 80 2 4 6 25C 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 125C 25C 0.2 0.4 0.6 0.8 1.0 1.2 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=37.5V Id=3.1A 400 350 Ciss 300 8 Capacitance (pF) Vgs (Volts) 6 250 200 150 Coss 100 Crss 50 4 2 0 0 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 1 2 6 0 0 30 40 50 Vds (Volts) Figure 8: Capacitance Characteristics 10 20 60 100.0 Tj(max)=150C, Ta=25C 10.0 10Ps 100Ps 1ms 10ms 1s 0.1 10s DC 0.1s 40 30 Power (W) Id (Amps) Rds(on) limited 1.0 Tj(max)=150C Ta=25C 20 10 0.0 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Tj+Pdm.ZTja.RTja RTja=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton 0.01 0.1 1 Single Pulse 0.01 0.00001 0.0001 0.001 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) |
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