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| Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 BAT86 SMALL SIGNAL SCHOTTKY DIODES Features * * * * For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage,such as electrostatic discharges. These diode is also available in the Mini-MELF case with type designation LL86 Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,and low logic applications. MECHANICAL DATA * * * Case: Do-35 glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols Repetitive Peak Reverse Voltage Forward Continuous Current at T =25 C Repetitive Peak Forward Current at t<1s,a< 0.5,TA=250C 0 Value 50 2001) 3001) Units V mA mA VR IF I FRM Power Dissipation at TA=65 C 0 Ptot TJ TA TSTG 2001) 125 -55~+125 -55~+150 0 0 0 mW C C C Junction temperature Ambient Operating temperature Range Storage Temperature Range Dimensions in inches and (millimeters) 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS Reverse breakdown voltage Tested with 10 A pulses Forward voltage Pulse Test tp 300s, 2% at IF=0.1mA, at IF=1mA, at IF=10mA, at IF=30mA, at IF=100mA Leakage current VR=25V Junction Capacitance at VR=1V ,f=1MHz Reverse recovery time Form IF=10mA,IR=10mA,IR =1mA Thermal resistance junction to ambient Air V(BR)R VF VF VF VF VF IR CJ trr RJA 50 V 0.200 0.272 0.365 0.460 0.700 0.2 0.300 0.380 0.450 0.600 0.900 0.5 8 5 300 V V V V V A pF ns K/W 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35) www.cnelectr.com |
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