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APT15GP60BDL(G)
600V, 15A, VCE(ON) = 2.2V Typical
Resonant Mode Combi IGBT(R)
The POWER MOS 7(R) IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
Features * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * Low forward Diode Voltage (VF) * Ultrasoft Recovery Diode * SSOA Rated * RoHS Compliant Typical Applications * Induction Heating * Welding * Medical * High Power Telecom * Resonant Mode Phase Shifted Bridge
G C
TO -2 47
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
Ratings UNIT
600 20 30 56 27 65 65A @ 600V 250 -55 to 150 300
Watts C Amps
Volts
@ TC = 25C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) I CES I GES Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 275
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2750 100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
052-6356
Rev B
11-2008
A
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT15GP60BDL(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 15A TJ = 150C, R G = 5,VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 15A
4 5
MIN
TYP
MAX
UNIT pF V nC
1685 210 15 7.5 55 12 15 65 8 12 29 58 130 152 121 8 12 69 88 130 267 268
MIN TYP MAX UNIT C/W gm ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55
RG = 5 TJ = +25C
Turn-on Switching Energy (With Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 15A RG = 5 TJ = +125C
Turn-on Switching Energy (With Diode)
66
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
.50 1.00 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6356
Rev B
11-2008
TYPICAL PERFORMANCE CURVES
30 25 20 15 10 5 0 TC=25C TC=125C TC=-55C
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
30 25 20 15 10 5 0
APT15GP60BDL(G)
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TC=25C TC=125C TC=-55C
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) 100 TJ = -55C VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 GATE CHARGE (nC) FIGURE 4, Gate Charge 60 VCE = 480V
I = 15A C T = 25C
J
IC, COLLECTOR CURRENT (A)
80
VCE = 120V VCE = 300V
60
40 TJ = 25C 20 TJ = 125C 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5 2 1.5 1 0.5
3.5 3 2.5 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC =30A IC = 15A IC = 7.5A
IC =30A IC = 15A IC = 7.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 80
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
IC, DC COLLECTOR CURRENT(A)
1.15
70 60 50 40 11-2008 052-6356 Rev B 30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT15GP60BDL(G)
18 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 16 14 12 10 8 6 4 2 0 VCE = 400V TJ = 25C or 125C RG = 5 L = 100 H VGE= 15V VGE= 10V 80 70 60 50 40 30 20 10 0 VCE = 400V RG = 5 L = 100 H
VGE =10V,TJ=25C VGE =15V,TJ=25C VGE =10V,TJ=125C VGE =15V,TJ=125C
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30 25 tr, RISE TIME (ns) 20 15 10 5 0
TJ = 25 or 125C,VGE = 15V RG =5, L = 100H, VCE = 400V TJ = 25 or 125C,VGE = 10V
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
80 tf, FALL TIME (ns)
TJ = 125C, VGE = 10V or 15V
60
TJ = 25C, VGE = 10V or 15V
40
20
RG =5, L = 100H, VCE = 400V
10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 700 EOFF, TURN OFF ENERGY LOSS (J) EON2, TURN ON ENERGY LOSS (J) 600 500 400 300 200
TJ = 25C, VGE=15V
V = 400V CE L = 100 H R =5
G
5
10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 700 600 500 400 300 200 100 0
TJ = 25C, VGE = 10V or 15V
V = 400V CE L = 100 H R =5
G
0
5
TJ = 125C, VGE = 10V or 15V
TJ =125C, VGE=15V
TJ =125C,VGE=10V
100 0
TJ = 25C, VGE=10V
0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 900 SWITCHING ENERGY LOSSES (J) SWITCHING ENERGY LOSSES (J) 800 700 600 500 400 300 200 100 0 0 Eon2 15A Eoff 15A Eon2 7.5A Eoff 7.5A Eoff 30A
V = 400V CE V = +15V GE TJ = 125C
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 700
V = 400V CE V = +15V GE R =5
G
Eon2 30A
600 500 400 300 200 100
Eon2 30A
Eoff 30A
11-2008
Eon2 15A Eoff 15A
Eon2 7.5A Eoff 7.5A
Rev B
052-6356
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0 -50
TYPICAL PERFORMANCE CURVES
4,000 Cies 1,000 C, CAPACITANCE ( F) 500 Coes 100 50 Cres 10
P
70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0
APT15GP60BDL(G)
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
0.60 0.50 0.9 0.40 0.7 0.30 0.5 Note:
PDM
, THERMAL IMPEDANCE (C/W)
0.20
0.3
t1 t2
qJC
0.10 0 10-5
0.1 0.05 10-4
Z
Duty Factor D = t1/t2
SINGLE PULSE
Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
292 FMAX, OPERATING FREQUENCY (kHz)
TJ ( C)
0.216 Dissipated Power (Watts) 0.0060 0.161
TC ( C)
0.284
100
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
ZEXT
50
10 FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
T = 125C J T = 75C C D = 50 % V = 400V CE R =5W
G
5
10
15
20
25
30
35
40
45
50
IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
052-6356
Rev B
TJ - TC R JC
11-2008
APT15GP60BDL(G)
APT30DL60 APT15DF60
Gate Voltage
10%
TJ = 125 C
td(on)
V CC IC V CE
tr 90%
A D.U.T.
Collector Current
5%
Switching Energy
10%
5%
Collector Voltage
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90% Gate Voltage Collector Voltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125 C
A V CE IC 100uH V CLAMP B
td(off)
tf
90%
10% Switching Energy
0
A DRIVER* D.U.T.
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
052-6356
Rev B
11-2008
DYNAMIC CHARACTERISTICS
APT15GP60BDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 126C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT15GP60BDL(G) UNIT Amps
30 51 320
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C MIN TYP MAX UNIT Volts
1.25 2.0 1.25
MIN TYP
1.6
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MAX UNIT ns nC Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.2 ZJC, THERMAL IMPEDANCE (C/W) 1 0.8 0.6
Note:
64 317 962 7 561 2244 9 264 3191 26 -
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF =30A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C
PDM
0.4 0.2 0
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 11-2008 052-6356 Rev B
TJ (C) TC (C)
Dissipated Power (Watts)
.0005
.0016
0.263
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
.112
.437
.450
TYPICAL PERFORMANCE CURVES
100 90 80 IF, FORWARD CURRENT (A) 70 60 50 40 30 20 10 0 0 800 TJ= 125C trr, COLLECTOR CURRENT (A) TJ= 150C TJ= 55C 700 600 500 400 300 200 100 0 15A 60A 30A
APT15GP60BDL(G)
T = 125C J V = 400V
R
TJ= 25C
Qrr, REVERSE RECOVERY CHARGE (nC)
IRRM, REVERSE RECOVERY CURRENT (A)
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 4500 T = 125C 60A J V = 400V R 4000 3500 3000 2500 2000 1500 1000 500 15A 30A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 32 28 24 20 16 12 8 4 0
T = 125C J V = 400V
R
60A 30A 15A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1 0.8 0.6 0.4 0.2 0 IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 60 50 40 IF(AV) (A) 30 20 10
Duty cycle = 0.5 TJ = 126C
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
tRR QRR
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 300 CJ, JUNCTION CAPACITANCE (pF) 250 200 150 100 50 0
Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
052-6356
Rev B
11-2008
10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
1
Vr +18V 0V D.U.T.
trr/Qrr Waveform
diF /dt Adjust
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (B) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector (Cathode)
Emitter (Anode)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6356
Rev B
Dimensions in Millimeters and (Inches)
11-2008

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