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| SMD Type NPN High-Voltage Transistors BSR19,BSR19A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Low current (max. 300 mA) High voltage (max. 160 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BSR19 BSR19A Collector-emitter voltage BSR19 BSR19A Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * VEBO IC ICM IB IBM Ptot Tstg Tj Ramb Rth j-a VCEO Symbol VCBO Rating 160 180 140 160 6 300 600 100 100 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V V V mA mA mA mA mW * Transistor mounted on an FR4 printed-circuit board. +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BSR19,BSR19A Electrical Characteristics Ta = 25 Parameter Collector cutoff current BSR19 Symbol ICBO Testconditons IE = 0; VCB = 100 V IE = 0; VCB = 100 V; Tamb = 100 Collector cutoff current BSR19A ICBO IEBO BSR19 BSR19A DC current gain * BSR19 BSR19A collector-emitter saturation voltage collector-emitter saturation voltage BSR19 BSR19A Collector capacitance Transition frequency Cc fT IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz 100 VCEsat VCEsat IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA hFE IC = 50 mA; VCE = 5 V hFE IE = 0; VCB = 120 V IE = 0; VCB = 120 V; Tamb = 100 Emitter cutoff current DC current gain * IC = 0; VEB = 4 V IC = 10 mA; VCE = 5 V 60 80 20 30 Min Transistors Typ Max 100 100 50 50 50 250 250 Unit nA iA nA iA nA 150 250 200 6 300 mV mV mV pF MHz hFE Classification TYPE Marking BSR19 U35 BSR19A U36 2 www.kexin.com.cn |
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