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| INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF740 DESCRIPTION *Drain Current -ID= 10A@ TC=25 *Drain Source Voltage: VDSS= 400V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.55(Max) *Fast Switching Speed APPLICATIONS *Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VDSS VGS ID Ptot Tj Tstg ARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25 Total Dissipation@TC=25 Max. Operating Junction Temperature Storage Temperature Range w ww scs .i VALUE 400 20 10 125 150 -65~150 .cn mi e UNIT V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor *ELECTRICAL CHARACTERISTICS (TC=25) SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-stage Resistance Gate Source Leakage Current Zero Gate Voltage Drain Current Diode Forward Voltage CONDITIONS VGS=0; ID= 0.25mA VDS= VGS; ID= 0.25mA VGS= 10V; ID= 5A VGS= 20V; VDS= 0 VDS= 400V; VGS= 0 IF= 10A; VGS= 0 MIN 400 2 IRF740 MAX UNIT V 4 0.55 500 250 2.2 V nA uA V w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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