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| 25 -9V -8V -7V -6V -10V -5V -4V -3.5V -3V 10 Vds=-5V 20 8 -Id (A) -Id (A) 15 6 10 -2.5V -2V Vgs=-1.5V 4 125C 2 25C 0 5 5 0 0 1 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 180 0 0.5 1 1.5 2 2.5 3 3.5 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=-2.5V Normalized On-Resistance 160 Vgs=-2.5V Id=-1A 1.4 Vgs=-4.5V Id=-1.3A 1.2 Vgs=-10V Id=-2A 1 Rds(on) (m:) 140 Vgs=-4.5V 120 100 Vgs=-10V 80 60 0 1 2 3 4 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 340 300 260 Id=-2A 1.0E+01 1.0E+00 1.0E-01 125C 25C Rds(on) (m:) -Is (A) 125C 25C 220 180 140 100 60 0 2 4 6 8 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.4 0.8 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=-10V Id=-2A 800 3 2 1 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) 600 Ciss -Vgs (Volts) 400 Coss 200 Crss 0 0 5 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics 100.00 Tj(max)=150C Ta=25C Rds(on) limited 14 12 10 10Ps 0.1s 10ms Tj(max)=150C Ta=25C 10.00 -Id (Amps) Power (W) 8 6 4 1.00 0.10 1s 10s DC 2 0 0.001 0.01 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=220C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd P 0.1 T Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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