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| 25 -8V 20 -4.5V -3.0V -2.0V 10 Vds=-5V 8 -Id (A) -Id (A) 15 -2.5V 6 10 Vgs=-1.5V 5 4 125C 2 25C 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 80 Vgs=-1.8V 0 0 0.5 1 1.5 2 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance Id=-4A, Vgs=-2.5V 1.4 Id=-2A, Vgs=-1.8V Rds(on) (m:) 60 Vgs=-2.5V 40 Vgs=-4.5V 20 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 Id=-4A, Vgs=-4.5V 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 100 90 80 Id=-4A 1E+01 1E+00 1E-01 125C Rds(on) (m:) -Is (A) 70 60 50 40 30 25C 125C 1E-02 1E-03 1E-04 1E-05 1E-06 25C 20 0 2 4 6 8 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=-10V Id=-4A 2400 2000 Ciss Capacitance (pF) -Vgs (Volts) 1600 1200 800 Coss 400 Crss 0 3 2 1 0 0 5 10 15 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150C Ta=25C Rds(on) limited 40 10Ps 30 100Ps 1ms Tj(max)=150C Ta=25C -Id (Amps) Power (W) 10.0 20 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) 10 10ms 0.1s 10 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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