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MITSUBISHI IGBT MODULES
CM600DY-12NF
HIGH POWER SWITCHING USE
CM600DY-12NF
IC ................................................................... 600A VCES ............................................................ 600V Insulated Type 2-elements in a pack
APPLICATION General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point (Base plate) 110 930.25 14
14
14
4
E2 G2
80 620.25
6
G1 E1
C2E1
E2
C1
3-M6 NUTS
25
25
21.5
4-6.5 MOUNTING HOLES
6
30 (20.5)
15
18
7
18
7
18
TAB #110. t=0.5
8.5
+1.0 -0.5
C2E1
E2
C1
CIRCUIT DIAGRAM
G1 E1
29
LABEL
21.2
E2 G2
Feb. 2009 1
MITSUBISHI IGBT MODULES
CM600DY-12NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25C, unless otherwise specified)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC' = 89C*3 Pulse Pulse TC = 25C Conditions Ratings 600 20 600 1200 600 1200 1130 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A A A W C C Vrms N*m N*m g
(Note 2) (Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 600A, VGE = 15V VCC = 300V, IC = 600A VGE = 15V RG = 1, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25C Tj = 125C Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.0 Limits Typ. -- 6 -- 1.7 1.7 -- -- -- 2400 -- -- -- -- -- 8.7 -- -- -- 0.02 -- -- Max. 1 7.5 0.5 2.2 -- 90 11 3.6 -- 500 300 750 300 250 -- 2.6 0.11 0.18 -- 0.046*3 10 Unit mA V A V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W K/W
*1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : Case temperature (Tc') measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C.
Feb. 2009 2
MITSUBISHI IGBT MODULES
CM600DY-12NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT IC (A)
VGE = 20V 1000 800 600 400
15 13
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
1200
4
Tj = 25C 12
VGE = 15V
3
11
2
10 200 0 8 0 2 4 6 8 9 10
1 Tj = 25C Tj = 125C 0 0 200 400 600 800 1000 1200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104
7 5 3 2
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
10
Tj = 25C
8
EMITTER CURRENT IE (A)
103
7 5 3 2
6
4
IC = 600A IC = 1200A
102
7 5 3 2
2 IC = 240A 0 6 8 10 12 14 16 18 20
Tj = 25C Tj = 125C 0 1 2 3 4 5
101
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 103 103
7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tf
CAPACITANCE Cies, Coes, Cres (nF)
7 5
SWITCHING TIME (ns)
3 2
102
7 5 3 2
Cies
102
7 5 3 2
tr Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive load
2 3 5 7 102 2 3 5 7 103
101
7 5 3 2
101
7 5 3 2
Coes
Cres VGE = 0V 100 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
100 1 10
COLLECTOR CURRENT IC (A)
Feb. 2009 3
MITSUBISHI IGBT MODULES
CM600DY-12NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c)
7 5 3 2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100
7 5 3 2
Single Pulse TC = 25C 10-1
7 5 3 2
Irr trr Conditions: VCC = 300V VGE = 15V RG = 4.2 Tj = 25C Inductive load 23 5 7 103
10-1
7 5 3 2
102
7 5 3 2
101 1 10
2
3
5 7 102
IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.11K/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.18K/W -3 10
10-2
7 5 3 2
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3
EMITTER CURRENT IE (A)
TIME (s)
GATE CHARGE CHARACTERISTICS (TYPICAL) 20
GATE-EMITTER VOLTAGE VGE (V)
IC = 600A VCC = 200V 16 VCC = 300V
12
8
4
0
0
1000 2000 3000 500 1500 2500 3500 GATE CHARGE QG (nC)
Feb. 2009 4

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